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SST39LH160-55-4C-EK

更新时间： 2024-11-19 20:05:47
品牌 Logo 应用领域
芯科 - SILICON 光电二极管内存集成电路闪存
页数 文件大小 规格书
24页 247K
描述
Flash, 1MX16, 55ns, PDSO48

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中文翻译

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SST39LH160-55-4C-EK 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：TSSOP, TSSOP48,.8,20Reach Compliance Code：unknown
风险等级：5.92最长访问时间：55 ns
命令用户界面：YES通用闪存接口：YES
数据轮询：YESJESD-30 代码：R-PDSO-G48
JESD-609代码：e0内存密度：16777216 bit
内存集成电路类型：FLASH内存宽度：16
部门数/规模：512端子数量：48
字数：1048576 words字数代码：1000000
最高工作温度：70 °C最低工作温度：
组织：1MX16封装主体材料：PLASTIC/EPOXY
封装代码：TSSOP封装等效代码：TSSOP48,.8,20
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行：PARALLEL电源：3.3 V
认证状态：Not Qualified部门规模：2K
最大待机电流：0.00002 A子类别：Flash Memories
最大压摆率：0.025 mA标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL切换位：YES
类型：NOR TYPEBase Number Matches：1

SST39LH160-55-4C-EK 数据手册

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16 Megabit (1M x 16-Bit) High Speed Multi-Purpose Flash  
SST39LH160Q / SST39LH160  
Advance Information  
FEATURES:  
•
•
•
Organized as 1 M X 16  
•
•
Latched Address and Data  
Fast Sector Erase and Word Program:  
Single 3.0-3.6V Read and Write Operations  
1
-
-
-
-
-
Sector Erase Time: 18 ms (typical)  
Block Erase Time: 18 ms (typical)  
Chip Erase Time: 70 ms (typical)  
Word Program Time: 14 µs (typical)  
Chip Rewrite Time: 15 seconds (typical)  
V
DDQ Power Supply to Support 5V I/O  
for SST39LH160Q  
DDQ not available on SST39LH160  
Superior Reliability  
2
-
V
•
•
-
-
Endurance: 100,000 Cycles (typical)  
Greater than 100 years Data Retention  
•
•
Automatic Write Timing  
Internal VPP Generation  
End of Write Detection  
3
-
Low Power Consumption:  
-
-
-
Active Current: 15 mA (typical)  
Standby Current: 10 µA (typical)  
Auto Low Power Mode: 10 µA (typical)  
4
-
-
Toggle Bit  
Data# Polling  
•
•
CMOS I/O Compatibility  
•
•
•
Small Sector Erase Capability (512 sectors)  
Uniform 2 KWord sectors  
Block Erase Capability (32 blocks)  
Uniform 32 KWord blocks  
Fast Read Access Time:  
55 ns  
5
JEDEC Standard  
-
-
Flash EEPROM Pinouts and command sets  
•
Packages Available  
-
6
-
-
48-Pin TSOP (12mm x 20mm)  
6 x 8 Ball TFBGA  
-
7
PRODUCT DESCRIPTION  
alternative flash technologies. The total energy con-  
sumed is a function of the applied voltage, current, and  
timeofapplication.Sinceforanygivenvoltagerange,the  
SuperFlashtechnologyuseslesscurrenttoprogramand  
has a shorter erase time, the total energy consumed  
during any Erase or Program operation is less than  
alternative flash technologies. The SST39LH160Q/  
LH160 also improve flexibility while lowering the cost for  
program, data, and configuration storage applications.  
The SST39LH160Q/LH160 devices are 1M x 16 CMOS  
Multi-Purpose Flash (MPF) manufactured with SST’s  
proprietary, high performance CMOS SuperFlash tech-  
nology. The split-gate cell design and thick oxide tunnel-  
ing injector attain better reliability and manufacturability  
compared with alternate approaches. The  
SST39LH160Q/LH160 write (Program or Erase) with a  
3.0-3.6Vpowersupply.TheSST39LH160Q/LH160con-  
form to JEDEC standard pinouts for x16 memories.  
8
9
10  
11  
12  
13  
14  
15  
16  
The SuperFlash technology provides fixed Erase and  
Program times, independent of the number of Erase/  
Program cycles that have occurred. Therefore the sys-  
tem software or hardware does not have to be modified  
or de-rated as is necessary with alternative flash tech-  
nologies, whose erase and program times increase with  
accumulated Erase/Program cycles.  
Featuring high performance Word Program, the  
SST39LH160Q/LH160 devices provide a typical word-  
program time of 14 µsec. The entire memory can typi-  
cally be erased and programmed word-by-word in 15  
seconds, when using interface features such as Toggle  
BitorData#PollingtoindicatethecompletionofProgram  
operation. To protect against inadvertent write, the  
SST39LH160Q/LH160haveon-chiphardwareandsoft-  
ware data protection schemes. Designed, manufac-  
tured,andtestedforawidespectrumofapplications,the  
SST39LH160Q/LH160 are offered with a guaranteed  
endurance of 10,000 cycles. Data retention is rated at  
greater than 100 years.  
To meet high density, surface mount requirements, the  
SST39LH160Q/LH160 are offered in 48-pin TSOP and  
48-pin TFBGA packages. See Figures 1 and 2 for  
pinouts.  
Device Operation  
Commands are used to initiate the memory operation  
functions of the device. Commands are issued to the  
deviceusingstandardmicroprocessorwritesequences.  
A command is loaded by asserting WE# low while  
keeping CE# low. The address bus is latched on the  
falling edge of WE# or CE#, whichever occurs last. The  
data bus is latched on the rising edge of WE# or CE#,  
whichever occurs first.  
The SST39LH160Q/LH160 devices are suited for appli-  
cationsthatrequireconvenientandeconomicalupdating  
of program, configuration, or data memory. For all sys-  
tem applications, the SST39LH160Q/LH160 signifi-  
cantly improve performance and reliability, while lower-  
ing power consumption. The SST39LH160Q/LH160 in-  
herentlyuselessenergyduringEraseandProgramthan  
© 1999 Silicon Storage Technology, Inc.The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MPF is a trademark of Silicon Storage Technology, Inc.  
352-02 5/99 These specifications are subject to change without notice.  
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