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SST39LF800A-45-4C-BK

更新时间： 2024-11-19 19:52:07
品牌 Logo 应用领域
芯科 - SILICON 内存集成电路闪存
页数 文件大小 规格书
28页 342K
描述
Flash, 512KX16, 45ns, PBGA48

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SST39LF800A-45-4C-BK 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：FBGA, BGA48,6X8,32Reach Compliance Code：unknown
风险等级：5.89最长访问时间：45 ns
命令用户界面：YES通用闪存接口：YES
数据轮询：YESJESD-30 代码：R-PBGA-B48
JESD-609代码：e0内存密度：8388608 bit
内存集成电路类型：FLASH内存宽度：16
部门数/规模：256端子数量：48
字数：524288 words字数代码：512000
最高工作温度：70 °C最低工作温度：
组织：512KX16封装主体材料：PLASTIC/EPOXY
封装代码：FBGA封装等效代码：BGA48,6X8,32
封装形状：RECTANGULAR封装形式：GRID ARRAY, FINE PITCH
并行/串行：PARALLEL电源：3.3 V
认证状态：Not Qualified部门规模：2K
最大待机电流：0.00002 A子类别：Flash Memories
最大压摆率：0.03 mA标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：BALL端子节距：0.8 mm
端子位置：BOTTOM切换位：YES
类型：NOR TYPEBase Number Matches：1

SST39LF800A-45-4C-BK 数据手册

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2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash  
SST39LF200A / SST39LF400A / SST39LF800A  
SST39VF200A / SST39VF400A / SST39VF800A  
Preliminary Specifications  
FEATURES:  
•
•
Organized as 128K x16 / 256K x16 / 512K x16  
Single Voltage Read and Write Operations  
•
Fast Erase and Word-Program:  
– Sector-Erase Time: 18 ms (typical)  
– Block-Erase Time: 18 ms (typical)  
– Chip-Erase Time: 70 ms (typical)  
– Word-Program Time: 14 µs (typical)  
– Chip Rewrite Time:  
– 3.0-3.6V for SST39LF200A/400A/800A  
– 2.7-3.6V for SST39VF200A/400A/800A  
•
•
Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
2 seconds (typical) for SST39LF/VF200A  
4 seconds (typical) for SST39LF/VF400A  
8 seconds (typical) for SST39LF/VF800A  
Low Power Consumption:  
•
•
Automatic Write Timing  
– Internal VPP Generation  
End-of-Write Detection  
– Active Current: 20 mA (typical)  
– Standby Current: 1 µA (typical)  
•
•
•
Sector-Erase Capability  
– Uniform 2 KWord sectors  
Block-Erase Capability  
– Uniform 32 KWord blocks  
Fast Read Access Time:  
– Toggle Bit  
– Data# Polling  
•
•
CMOS I/O Compatibility  
JEDEC Standard  
– Flash EEPROM Pinouts and command sets  
Packages Available  
– 45 and 55 ns for SST39LF200A/400A/800A  
– 70 and 90 ns for SST39VF200A/400A/800A  
•
•
Latched Address and Data  
– 48-Pin TSOP (12mm x 20mm)  
– 48-ball TFBGA (8mm x 10mm and 6mm x 8mm)  
PRODUCT DESCRIPTION  
The SST39LF200A/400A/800A and SST39VF200A/400A/  
800A devices are 128Kx16 / 256Kx16 / 512Kx16 CMOS  
Multi-Purpose Flash (MPF) manufactured with SST’s pro-  
prietary, high performance CMOS SuperFlash technology.  
The split-gate cell design and thick oxide tunneling injector  
attain better reliability and manufacturability compared with  
alternate approaches. The SST39LF200A/400A/800A  
write (Program or Erase) with a 3.0-3.6V power supply. The  
SST39VF200A/400A/800A write (Program or Erase) with a  
2.7-3.6V power supply. These devices conform to JEDEC  
standard pinouts for x16 memories.  
power consumption. They inherently use less energy dur-  
ing Erase and Program than alternative flash technologies.  
When programming a flash device, the total energy con-  
sumed is a function of the applied voltage, current, and  
time of application. Since for any given voltage range, the  
SuperFlash technology uses less current to program and  
has a shorter erase time, the total energy consumed during  
any Erase or Program operation is less than alternative  
flash technologies. These devices also improve flexibility  
while lowering the cost for program, data, and configuration  
storage applications.  
Featuring high performance Word-Program, the  
SST39LF200A/400A/800A and SST39VF200A/400A/  
800A devices provide a typical Word-Program time of 14  
µsec. The devices use Toggle Bit or Data# Polling to detect  
the completion of the Program or Erase operation. To pro-  
tect against inadvertent write, they have on-chip hardware  
and software data protection schemes. Designed, manu-  
factured, and tested for a wide spectrum of applications,  
these devices are offered with a guaranteed endurance of  
10,000 cycles. Data retention is rated at greater than 100  
years.  
The SuperFlash technology provides fixed Erase and Pro-  
gram times, independent of the number of Erase/Program  
cycles that have occurred. Therefore the system software  
or hardware does not have to be modified or de-rated as is  
necessary with alternative flash technologies, whose Erase  
and Program times increase with accumulated Erase/Pro-  
gram cycles.  
To meet surface mount requirements, the SST39LF200A/  
400A/800A and SST39VF200A/400A/800A are offered in  
both 48-pin TSOP package and 48-ball TFBGA package.  
See Figures 1 and 2 for pinouts.  
The SST39LF200A/400A/800A and SST39VF200A/400A/  
800A devices are suited for applications that require conve-  
nient and economical updating of program, configuration,  
or data memory. For all system applications, they signifi-  
cantly improve performance and reliability, while lowering  
Device Operation  
Commands are used to initiate the memory operation func-  
tions of the device. Commands are written to the device  
using standard microprocessor write sequences. A com-  
©2000 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MPF is a trademark of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
360-3 10/00  
1
S71117  
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SST39LF800A-55-4C-B2K SILICON

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SST39LF800A-55-4C-B3K SST

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 		2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39LF800A-55-4C-B3KE MICROCHIP

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 		512K X 16 FLASH 3V PROM, 55 ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, MO-210AB-

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