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SST39LF800A-55-4C-B3KE-T PDF预览

SST39LF800A-55-4C-B3KE-T

更新时间: 2024-11-19 15:52:55
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路闪存
页数 文件大小 规格书
37页 4158K
描述
IC,EEPROM,NOR FLASH,512KX16,CMOS,BGA,48PIN,PLASTIC

SST39LF800A-55-4C-B3KE-T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:FBGA, BGA48,6X8,32
Reach Compliance Code:compliantECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51Factory Lead Time:7 weeks
风险等级:5.68最长访问时间:55 ns
命令用户界面:YES通用闪存接口:YES
数据轮询:YESJESD-30 代码:R-PBGA-B48
JESD-609代码:e1内存密度:8388608 bit
内存集成电路类型:FLASH内存宽度:16
湿度敏感等级:3部门数/规模:256
端子数量:48字数:524288 words
字数代码:512000最高工作温度:70 °C
最低工作温度:组织:512KX16
封装主体材料:PLASTIC/EPOXY封装代码:FBGA
封装等效代码:BGA48,6X8,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:3.3 V
认证状态:Not Qualified部门规模:2K
最大待机电流:0.00002 A子类别:Flash Memories
最大压摆率:0.03 mA标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
切换位:YES类型:NOR TYPE
Base Number Matches:1

SST39LF800A-55-4C-B3KE-T 数据手册

 浏览型号SST39LF800A-55-4C-B3KE-T的Datasheet PDF文件第2页浏览型号SST39LF800A-55-4C-B3KE-T的Datasheet PDF文件第3页浏览型号SST39LF800A-55-4C-B3KE-T的Datasheet PDF文件第4页浏览型号SST39LF800A-55-4C-B3KE-T的Datasheet PDF文件第5页浏览型号SST39LF800A-55-4C-B3KE-T的Datasheet PDF文件第6页浏览型号SST39LF800A-55-4C-B3KE-T的Datasheet PDF文件第7页 
2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash  
SST39LF200A / SST39LF400A / SST39LF800A  
SST39VF200A / SST39VF400A / SST39VF800A  
A Microchip Technology Company  
Data Sheet  
The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K  
x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with  
SST proprietary, high-performance CMOS SuperFlash technology. The split-gate  
cell design and thick oxide tunneling injector attain better reliability and manufac-  
turability compared with alternate approaches. The SST39LF200A/400A/800A  
write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF200A/400A/  
800A write (Program or Erase) with a 2.7-3.6V power supply. These devices con-  
form to JEDEC standard pinouts for x16 memories.  
Features:  
• Organized as 128K x16 / 256K x16 / 512K x16  
• Fast Erase and Word-Program  
– Sector-Erase Time: 18 ms (typical)  
– Block-Erase Time: 18 ms (typical)  
– Chip-Erase Time: 70 ms (typical)  
– Word-Program Time: 14 µs (typical)  
– Chip Rewrite Time:  
2 seconds (typical) for SST39LF/VF200A  
4 seconds (typical) for SST39LF/VF400A  
8 seconds (typical) for SST39LF/VF800A  
• Single Voltage Read and Write Operations  
– 3.0-3.6V for SST39LF200A/400A/800A  
– 2.7-3.6V for SST39VF200A/400A/800A  
• Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
• Automatic Write Timing  
• Low Power Consumption  
(typical values at 14 MHz)  
– Internal VPP Generation  
– Active Current: 9 mA (typical)  
• End-of-Write Detection  
– Standby Current: 3 µA (typical)  
– Toggle Bit  
– Data# Polling  
• Sector-Erase Capability  
– Uniform 2 KWord sectors  
• CMOS I/O Compatibility  
• Block-Erase Capability  
• JEDEC Standard  
– Uniform 32 KWord blocks  
– Flash EEPROM Pinouts and command sets  
• Fast Read Access Time  
• Packages Available  
– 55 ns for SST39LF200A/400A/800A  
– 70 ns for SST39VF200A/400A/800A  
– 48-lead TSOP (12mm x 20mm)  
– 48-ball TFBGA (6mm x 8mm)  
– 48-ball WFBGA (4mm x 6mm)  
• Latched Address and Data  
– 48-bump XFLGA (4mm x 6mm) – 4 and 8Mbit  
• All non-Pb (lead-free) devices are RoHS compliant  
www.microchip.com  
©2011 Silicon Storage Technology, Inc.  
DS25001A  
03/11  
 

SST39LF800A-55-4C-B3KE-T 替代型号

型号 品牌 替代类型 描述 数据表
SST39LF800A-55-4C-B3KE MICROCHIP

完全替代

512K X 16 FLASH 3V PROM, 55 ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, MO-210AB-

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