512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8)
Many-Time Programmable Flash
SST37VF512 / SST37VF010 / SST37VF020 / SST37VF040
Data Sheet
FEATURES:
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Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8
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Fast Byte-Program Operation
– Byte-Program Time: 10 µs (typical)
– Chip-Program Time:
2.7-3.6V Read Operation
Superior Reliability
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0.6 seconds (typical) for SST37VF512
1.2 seconds (typical) for SST37VF010
2.4 seconds (typical) for SST37VF020
4.8 seconds (typical) for SST37VF040
– Endurance: At least 1000 Cycles
– Greater than 100 years Data Retention
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Low Power Consumption
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Electrical Erase Using Programmer
– Active Current: 10 mA (typical)
– Standby Current: 1 µA (typical)
– Does not require UV source
– Chip-Erase Time: 100 ms (typical)
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Fast Read Access Time
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CMOS I/O Compatibility
– 70 and 90 ns
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JEDEC Standard Byte-wide Flash EEPROM
Pinouts
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Packages Available
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– 32-Pin PDIP
– 32-Pin PLCC
– 32-Pin TSOP (8mm x 14mm)
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PRODUCT DESCRIPTION
Device Operation
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The SST37VF512/010/020/040 devices are nonvolatile
memory solutions that can be used instead of standard
flash devices if in-system programmability is not re-
quired. It is functionally (Read) and pin compatible with
industry standard flash products.The device supports
electrical Erase operation via an external programmer.
The SST37VF512/010/020/040 devices are 64K x8 /
128K x8 / 256K x8 / 512K x8 CMOS, Many-Time Pro-
grammable (MTP), low cost flash, manufactured with
SST’s proprietary, high performance CMOS SuperFlash
technology. The split-gate cell design and thick oxide
tunneling injector attain better reliability and
manufacturability compared with alternate approaches.
TheSST37VF512/010/020/040canbeelectricallyerased
and programmed at least 1000 times using an external
programmer, e.g., to change the contents of devices in
inventory. The SST37VF512/010/020/040 have to be
erased prior to programming. These devices conform to
JEDEC standard pinouts for byte-wide flash memories.
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Read
The Read operation of the SST37VF512/010/020/040 is
controlledbyCE#andOE#.BothCE#andOE#havetobe
lowforthesystemtoobtaindatafromtheoutputs.Oncethe
address is stable, the address access time is equal to the
delay from CE# to output (TCE). Data is available at the
output after a delay of TOE from the falling edge of OE#,
assuming the CE# pin has been low and the addresses
have been stable for at least TCE - TOE. When the CE# pin
ishigh,thechipisdeselectedandastandbycurrentofonly
10µA(typical)isconsumed. OE#istheoutputcontroland
is used to gate data from the output pins. The data bus is
in high impedance state when either CE# or OE# is VIH.
Refer to Figure 4 for the timing diagram.
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Featuring high performance Byte-Program, the
SST37VF512/010/020/040 provide a typical Byte-Pro-
gramtimeof10µs. Designed, manufactured, andtested
for a wide spectrum of applications, these devices are
offered with an endurance of at least 1000 cycles. Data
retention is rated at greater than 100 years.
The SST37VF512/010/020/040 are suited for
applications that require infrequent writes and low
power nonvolatile storage. These devices will
improve flexibility, efficiency, and performance while
matching the low cost in nonvolatile applications that
currently use UV-EPROMs, OTPs, and mask ROMs.
Byte-Program Operation
The SST37VF512/010/020/040 are programmed by us-
ing an external programmer. The programming mode is
activated by asserting 12V (±5%) on OE# pin and VIL on
CE#pin. Thedeviceisprogrammedusingasinglepulse
(WE#pinlow)of10µsperbyte.UsingtheMTPprogram-
ming algorithm, the Byte-Program process continues
byte-by-byteuntiltheentirechiphasbeenprogrammed.
Refer to Figure 10 for the flowchart and Figure 6 for the
timing diagram.
To meet surface mount and conventional through hole
requirements, the SST37VF512/010/020/040 are of-
fered in 32-pin PLCC, PDIP and TSOP packages. See
Figures 1, 2 and 3 for pinouts.
© 2000 Silicon Storage Technology, Inc.The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MTP is a trademark of Silicon Storage Technology, Inc.
397-03 2/00
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These specifications are subject to change without notice.
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