512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash
SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040
SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
SST29SF/VF512 / 010 / 020 / 0405.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) Byte-Program, Small Erase Sector flash memories
Preliminary Specifications
FEATURES:
•
•
Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8
Single Voltage Read and Write Operations
•
Fast Erase and Byte-Program:
– Sector-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 µs (typical)
– Chip Rewrite Time:
– 5.0V-only for SST29SF512/010/020/040
– 2.7-3.6V for SST29VF512/010/020/040
•
•
Superior Reliability
1 second (typical) for SST29SF/VF512
2 seconds (typical) for SST29SF/VF010
4 seconds (typical) for SST29SF/VF020
8 seconds (typical) for SST29SF/VF040
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
Low Power Consumption:
•
•
Automatic Write Timing
– Internal VPP Generation
End-of-Write Detection
– Active Current: 10 mA (typical)
– Standby Current:
30 µA (typical) for SST29SF512/010/020/040
1 µA (typical) for SST29VF512/010/020/040
– Toggle Bit
– Data# Polling
•
•
Sector-Erase Capability
– Uniform 128 Byte sectors
Fast Read Access Time:
•
•
•
TTL I/O Compatibility for SST29SFxxx
CMOS I/O Compatibility for SST29VFxxx
JEDEC Standard
– 55 ns
– 70 ns
– Flash EEPROM Pinouts and command sets
Packages Available
•
Latched Address and Data
•
– 32-pin PLCC
– 32-pin TSOP (8mm x 14mm)
– 32-pin PDIP
PRODUCT DESCRIPTION
The SST29SF512/010/020/040 and SST29VF512/010/
020/040 are 64K x8 / 128K x8 / 256K x8 / 512K x8 CMOS
Small-Sector Flash (SSF) manufactured with SST’s propri-
etary, high performance CMOS SuperFlash technology.
The split-gate cell design and thick oxide tunneling injector
attain better reliability and manufacturability compared with
alternate approaches. The SST29SFxxx devices write
(Program or Erase) with a 4.5-5.5V power supply. The
SST29VFxxx devices write (Program or Erase) with a 2.7-
3.6V power supply. These devices conform to JEDEC stan-
dard pinouts for x8 memories.
and reliability, while lowering power consumption. They
inherently use less energy during Erase and Program than
alternative flash technologies. The total energy consumed
is a function of the applied voltage, current, and time of
application. Since for any given voltage range, the Super-
Flash technology uses less current to program and has a
shorter erase time, the total energy consumed during any
Erase or Program operation is less than alternative flash
technologies. They also improve flexibility while lowering
the cost for program, data, and configuration storage appli-
cations.
Featuring high performance Byte-Program, the
SST29SFxxx and SST29VFxxx devices provide a maxi-
mum Byte-Program time of 20 µsec. To protect against
inadvertent write, they have on-chip hardware and Soft-
ware Data Protection schemes. Designed, manufactured,
and tested for a wide spectrum of applications, these
devices are offered with a guaranteed endurance of at least
10,000 cycles. Data retention is rated at greater than 100
years.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet high density, surface mount requirements, the
SST29SFxxx and SST29VFxxx devices are offered in 32-
pin PLCC and 32-pin TSOP packages. A 600 mil, 32-pin
PDIP is also offered for SST29SFxxx devices. See Figures
1, 2, and 3 for pinouts.
The SST29SFxxx and SST29VFxxx devices are suited for
applications that require convenient and economical updat-
ing of program, configuration, or data memory. For all sys-
tem applications, they significantly improve performance
©2001 Silicon Storage Technology, Inc.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
SSF is a trademark of Silicon Storage Technology, Inc.
S71160-05-000 5/01
1
505
These specifications are subject to change without notice.
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