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SSR8045DRPDB PDF预览

SSR8045DRPDB

更新时间: 2024-11-13 04:30:03
品牌 Logo 应用领域
SSDI 局域网二极管
页数 文件大小 规格书
2页 119K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 80A, 45V V(RRM), Silicon, TO-259, HERMETIC SEALED PACKAGE-3

SSR8045DRPDB 技术参数

生命周期:Active零件包装代码:TO-259
包装说明:HERMETIC SEALED PACKAGE-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.2
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:TO-259
JESD-30 代码:R-XSFM-P3最大非重复峰值正向电流:1200 A
元件数量:2相数:1
端子数量:3最大输出电流:80 A
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大重复峰值反向电压:45 V表面贴装:NO
技术:SCHOTTKY端子形式:PIN/PEG
端子位置:SINGLEBase Number Matches:1

SSR8045DRPDB 数据手册

 浏览型号SSR8045DRPDB的Datasheet PDF文件第2页 
SSR8045CTN and SSR8045CTP  
Series  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
DESIGNER’S DATA SHEET  
Part Number / Ordering Information 1/  
80 Amp  
SCHOTTKY  
SSR8045CT PA UB TX  
Screening 2/ __ = Not Screened  
TX = TX Level  
CENTERTAP RECTIFIER  
TXV = TXV Level  
45 Volts  
S
= S Level  
Lead Bending:  
Features:  
__ = Straight  
• Low Reverse Leakage  
• Low Forward Voltage Drop  
UB = Up Bend  
DB = Down Bend  
• Guard Ring for Overload Protection  
• Isolated Hermetically Sealed Power Package  
• Also available in SMD1 and SMD2 Versions  
• TO-259 Available with Ceramic Seals w/ 40  
mil pin  
Package: N = TO-258  
P = TO-259, 60 mil pin  
PA = TO-259, 40 mil pin  
• TO-259 Custom Lead Forming Available  
• 175ºC Operating Temperature  
• TX, TXV, and S Level Screening Available  
Configuration: CT = Common Cathode  
CA = Common Anode  
D = Doubler  
DR = Doubler Reverse  
Maximum Ratings  
Symbol  
Value  
Units  
VRRM  
VRSM  
VR  
Peak Repetitive Reverse and DC Blocking Voltage  
45  
Volts  
Average Rectified Forward Current 3/  
(Resistive Load, 60 Hz Sine Wave, TA = 25 °C)  
Io  
80  
Amps  
Peak Surge Current 3/  
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C)  
IFSM  
1200  
Amps  
ºC  
Operating & Storage Temperature  
T
OP & TSTG  
-65 to +175  
Maximum Thermal Resistance  
Junction to Case  
Total  
Per Leg  
0.5  
1.0  
RθJE  
ºC/W  
NOTES:  
TO-258 (N)  
TO-259 (P)  
1/ For ordering information, price, operating curves, and availability  
Contact factory.  
2/ Screening based on MIL-PRF-19500. Screening flows available on  
request.  
3/ Maximum electrical rating shown for centertap configurations both legs  
tied together. For doubler configurations: IO = 40A, IFSM = 600A.  
4/ All electrical characteristics per leg @25ºC, unless otherwise specified.  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RS0065J  
DOC  

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