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SSR25C60CTMDB PDF预览

SSR25C60CTMDB

更新时间: 2024-11-04 20:49:31
品牌 Logo 应用领域
SSDI 局域网光电二极管
页数 文件大小 规格书
2页 94K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 12.5A, 600V V(RRM), Silicon Carbide, TO-254AA, TO-254, 3 PIN

SSR25C60CTMDB 技术参数

生命周期:Active包装说明:TO-254, 3 PIN
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.3其他特性:PD-CASE
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON CARBIDE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):2.3 V
JEDEC-95代码:TO-254AAJESD-30 代码:S-XSFM-P3
最大非重复峰值正向电流:80 A元件数量:2
相数:1端子数量:3
最高工作温度:250 °C最低工作温度:-55 °C
最大输出电流:12.5 A封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:FLANGE MOUNT
最大功率耗散:60 W最大重复峰值反向电压:600 V
最大反向电流:50 µA表面贴装:NO
技术:SCHOTTKY端子形式:PIN/PEG
端子位置:SINGLEBase Number Matches:1

SSR25C60CTMDB 数据手册

 浏览型号SSR25C60CTMDB的Datasheet PDF文件第2页 
Solid State Devices, Inc.  
SSR25C60 Series  
14701 Firestone Blvd * La Mirada, CA 90638-5223  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
Designer’s Data Sheet  
Part Number / Ordering Information 1/  
25 Amp  
SCHOTTKY SILICON CARBIDE  
CENTERTAP/DOUBLER RECTIFIER  
500 - 600 Volts  
SSR25C __ __ __ __ __  
Screening2/  
__ = Not Screened  
TX = TX Level  
TXV = TXV  
S = S Level  
Lead Options  
__ = Straight Leads  
FEATURES:  
High Voltage: 600V  
Very High Operating Temperature, 250°C  
No Recovery Time (tfr or trr)  
DB = Down Bend  
UB = Up Bend  
Package  
High Current Operation: 25A  
M = TO-254  
Hermetically Sealed, Isolated Power Package  
TX, TXV, and Space Level Screening  
Available - Consult Factory  
Lead Forming Available – Consult Factory  
Higher Currents and Higher Voltages  
Available – Consult Factory  
Configuration  
CT = Common Cathode  
CA = Common Anode  
D = Doubler  
Voltage 50 = 500 V  
60 = 600 V  
MAXIMUM RATINGS3/  
Symbol  
Value  
Units  
Volts  
Peak Repetitive Reverse and  
Peak Surge Reverse Voltage  
SSR25C50  
SSR25C60  
VRRM  
VRSM  
500  
600  
Average Rectified Forward Current  
(Resistive Load, 60 Hz, Sine Wave)  
Per Leg  
CT, CA Total  
12.5  
25  
IO  
Amps  
Amps  
Non Repetitive Peak Surge Current  
(8.3 ms Pulse, Half Sine Wave)  
Per Leg  
IFSM  
80  
Power Dissipation  
(TC = 25°C)  
Operating & Storage Temperature4/  
PD  
TOP & Tstg  
RθJC  
60  
-55 to +250  
2.0  
Watts  
oC  
Junction to Ambient  
Junction to Case  
oC/W  
Maximum Thermal Resistance3/  
TO-254 (M)  
NOTES:  
1/ For ordering information, price, and availability, contact factory.  
2/ Screening based on MIL-PRF-19500. Screening flows available on request.  
3/ Unless otherwise specified, all electrical characteristics @25ºC, per leg  
4/ If High temp operation is desired (>175°C), consult factory for soldering consideration.  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RC0165D  
DOC  

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