Datasheet > SSM3055L_15

SSM3055L_15

更新时间： 2024-12-01 01:23:19

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	370K
描述
N-Channel Enhancement Mode MOSFET

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SSM3055L_15 数据手册

SSM3055L

2.8A , 60V , R_DS(ON)100 mΩ

N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

SOT-223

DESCRIPTION

The SSM3055L utilized advanced processing

techniques to achieve the lowest possible on-resistance,

extremely efficient and cost-effectiveness device. The

SSM3055L is universally used for all commercial-industrial

applications.

Top View

C B

FEATURES

ꢀ

Simple Drive Requirement

Small Package Outline

ꢀ

MARKING

Millimeter

Min. Max.

Millimeter

REF.

Min.

0.25

Max.

0.10

0.35

6.20

6.70

3.30

1.42

4.50

0.60

6.70

7.30

3.70

1.90

4.70

0.82

3055L

ꢁꢁꢁꢁ

ꢁ

= Date code

2.30 REF.

2.90

3.10

TOP VIEW

PACKAGE INFORMATION

Package

MPQ

2.5K

Leader Size

SOT-223

13 inch

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

2.8

Continuous Drain Current ¹, V_GS@10V

I_D

2.3

Pulsed Drain Current ²

Power Dissipation ³

I_DM

P _D

°C

T_A=25°C

1.5

Operating Junction and Storage Temperature Range

T_j, T_stg

-55~150

Thermal Resistance Rating

Maximum Junction to Ambient ¹

Maximum Junction to Case ¹

R_θJA

R_θJC

°C / W

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

26-Jul-2013 Rev. A

Page 1 of 4

12 3 4

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