5秒后页面跳转
SSM2212RZ-RL PDF预览

SSM2212RZ-RL

更新时间: 2024-11-03 12:15:31
品牌 Logo 应用领域
亚德诺 - ADI 晶体小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
12页 260K
描述
Audio, Dual-Matched NPN Transistor

SSM2212RZ-RL 数据手册

 浏览型号SSM2212RZ-RL的Datasheet PDF文件第2页浏览型号SSM2212RZ-RL的Datasheet PDF文件第3页浏览型号SSM2212RZ-RL的Datasheet PDF文件第4页浏览型号SSM2212RZ-RL的Datasheet PDF文件第5页浏览型号SSM2212RZ-RL的Datasheet PDF文件第6页浏览型号SSM2212RZ-RL的Datasheet PDF文件第7页 
Audio, Dual-Matched  
NPN Transistor  
SSM2212  
PIN CONFIGURATION  
FEATURES  
Very low voltage noise: 1 nV/√Hz maximum @ 100 Hz  
Excellent current gain match: 0.5%  
Low offset voltage (VOS): 200 μV maximum  
Outstanding offset voltage drift: 0.03 μV/°C  
High gain bandwidth product: 200 MHz  
C
B
E
1
2
3
4
8
7
6
5
C
B
1
1
1
2
2
2
E
NIC  
NIC  
SSM2212  
NIC = NO INTERNAL CONNECTION  
Figure 1. 8-Lead SOIC_N  
GENERAL DESCRIPTION  
The SSM2212 is a dual, NPN-matched transistor pair that is  
specifically designed to meet the requirements of ultralow noise  
audio systems.  
Stability of the matching parameters is guaranteed by protection  
diodes across the base-emitter junction. These diodes prevent  
degradation of beta and matching characteristics due to reverse  
biasing of the base-emitter junction.  
With its extremely low input base spreading resistance (rbb' is  
typically 28 Ω) and high current gain (hFE typically exceeds 600  
at IC = 1 mA), the SSM2212 can achieve outstanding signal-to-  
noise ratios. The high current gain results in superior  
performance compared to systems incorporating commercially  
available monolithic amplifiers.  
The SSM2212 is also an ideal choice for accurate and reliable  
current biasing and mirroring circuits. Furthermore, because a  
current mirrors accuracy degrades exponentially with mismatches  
of VBE between transistor pairs, the low VOS of the SSM2212  
does not need offset trimming in most circuit applications.  
Excellent matching of the current gain (ΔhFE) to about 0.5% and  
low VOS of less than 10 μV typical make the SSM2212 ideal for  
symmetrically balanced designs, which reduce high-order  
amplifier harmonic distortion.  
The SSM2212 performance and characteristics are guaranteed  
over the extended temperature range of −40°C to +85°C.  
Rev. B  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registeredtrademarks arethe property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700  
Fax: 781.461.3113  
www.analog.com  
©2010 Analog Devices, Inc. All rights reserved.  
 

SSM2212RZ-RL 替代型号

型号 品牌 替代类型 描述 数据表
SSM2212RZ-R7 ADI

完全替代

Audio, Dual-Matched NPN Transistor
SSM2212RZ ADI

完全替代

Audio, Dual-Matched NPN Transistor

与SSM2212RZ-RL相关器件

型号 品牌 获取价格 描述 数据表
SSM2220 ADI

获取价格

Audio Dual Natched PNP transistor
SSM-2220 ADI

获取价格

Audio Dual Natched PNP transistor
SSM2220P ADI

获取价格

Audio Dual Natched PNP transistor
SSM2220PZ ADI

获取价格

Audio Dual Matched PNP Transistor
SSM2220S ADI

获取价格

Audio Dual Natched PNP transistor
SSM2220S-REEL ADI

获取价格

TRANSISTOR 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, SO-8, BIP General Pur
SSM2220SZ ADI

获取价格

Audio Dual Matched PNP Transistor
SSM2220SZ-REEL ADI

获取价格

Audio Dual Matched PNP Transistor
SSM2250 ADI

获取价格

Mono 1.5 W/Stereo 250 mW Power Amplifier
SSM2250_05 ADI

获取价格

Mono 1.5 W/Stereo 250 mW Power Amplifier