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SSI7N60B PDF预览

SSI7N60B

更新时间: 2024-11-27 22:21:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
9页 657K
描述
600V N-Channel MOSFET

SSI7N60B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-262包装说明:I2PAK-3
针数:3Reach Compliance Code:compliant
风险等级:5.34雪崩能效等级(Eas):420 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):7 A最大漏极电流 (ID):7 A
最大漏源导通电阻:1.2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):147 W
最大脉冲漏极电流 (IDM):28 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SSI7N60B 数据手册

 浏览型号SSI7N60B的Datasheet PDF文件第2页浏览型号SSI7N60B的Datasheet PDF文件第3页浏览型号SSI7N60B的Datasheet PDF文件第4页浏览型号SSI7N60B的Datasheet PDF文件第5页浏览型号SSI7N60B的Datasheet PDF文件第6页浏览型号SSI7N60B的Datasheet PDF文件第7页 
November 2001  
SSW7N60B / SSI7N60B  
600V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switch mode power supplies.  
7.0A, 600V, R  
= 1.2@V = 10 V  
DS(on) GS  
Low gate charge ( typical 38 nC)  
Low Crss ( typical 23 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
D
!
D
!
#
"
!
!
!
G
D2-PAK  
SSW Series  
I2-PAK  
SSI Series  
G
S
G D S  
!
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
SSW7N60B / SSI7N60B  
Units  
V
V
I
Drain-Source Voltage  
600  
7.0  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
4.4  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
28  
A
DM  
V
E
I
Gate-Source Voltage  
± 30  
420  
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
7.0  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
14.7  
5.5  
mJ  
V/ns  
W
AR  
dv/dt  
Power Dissipation (T = 25°C) *  
3.13  
147  
P
A
D
Power Dissipation (T = 25°C)  
W
C
- Derate above 25°C  
Operating and Storage Temperature Range  
1.18  
-55 to +150  
W/°C  
°C  
T , T  
J
stg  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8! from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
0.85  
40  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
θJA  
--  
--  
62.5  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2001 Fairchild Semiconductor Corporation  
Rev. B, November 2001  

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