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SS9014D PDF预览

SS9014D

更新时间: 2024-09-25 03:31:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器
页数 文件大小 规格书
4页 40K
描述
Pre-Amplifier, Low Level & Low Noise

SS9014D 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.73其他特性:LOW NOISE
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):400
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.45 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):270 MHz
Base Number Matches:1

SS9014D 数据手册

 浏览型号SS9014D的Datasheet PDF文件第2页浏览型号SS9014D的Datasheet PDF文件第3页浏览型号SS9014D的Datasheet PDF文件第4页 
SS9014  
Pre-Amplifier, Low Level & Low Noise  
High total power dissipation. (P =450mW)  
T
High h  
and good linearity  
FE  
Complementary to SS9015  
TO-92  
1. Emitter 2. Base 3. Collector  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
50  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
45  
V
CEO  
EBO  
5
V
I
100  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
450  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
50  
45  
5
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I
I
=100µA, I =0  
V
V
CBO  
CEO  
EBO  
C
C
E
BV  
BV  
=1mA, I =0  
B
I =100µA, I =0  
V
E
C
I
I
V
=50V, I =0  
50  
50  
nA  
nA  
CBO  
EBO  
CB  
EB  
CE  
E
Emitter Cut-off Current  
V
V
=5V, I =0  
C
h
DC Current Gain  
=5V, I =1mA  
60  
280  
0.14  
0.84  
0.63  
2.2  
1000  
0.3  
1.0  
0.7  
3.5  
FE  
C
V
V
V
(sat)  
(sat)  
(on)  
Collector-Base Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
Output Capacitance  
I
I
=100mA, I =5mA  
B
CE  
BE  
BE  
C
C
=100mA, I =5mA  
V
V
B
V
=5V, I =2mA  
0.58  
150  
CE  
C
C
V
=10V, I =0  
pF  
ob  
CB  
E
f=1MHz  
f
Current Gain Bandwidth Product  
Noise Figure  
V
=5V, I =10mA  
270  
0.9  
MHz  
dB  
T
CE  
C
NF  
V
=5V, I =0.2mA  
10  
CE  
C
f=1KHz, R =2KΩ  
S
h
Classification  
FE  
Classification  
A
B
C
D
h
60 ~ 150  
100 ~ 300  
200 ~ 600  
400 ~ 1000  
FE  
©2002 Fairchild Semiconductor Corporation  
Rev. A3, May 2002  

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