Datasheet > SS9014CD27Z

SS9014CD27Z

更新时间： 2024-09-26 04:25:55

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
4页	62K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

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SS9014CD27Z 数据手册

SS9014

Pre-Amplifier, Low Level & Low Noise

•

High total power dissipation. (P =450mW)

High hFE and good linearity

Complementary to SS9015

TO-92

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings _{T =25°C unless otherwise notedꢀ}

Symbol

Parameter

Ratings

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

CEO

EBO

100

Collector Dissipation

Junction Temperature

Storage Temperature

450

150

°C

-55 ~ 150

STG

Electrical Characteristics _{T =25°C unless otherwise notedꢀ}

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

=100µA, I =0

CBO

CEO

EBO

=1mA, I =0

I =100µA, I =0

=50V, I =0

CBO

EBO

Emitter Cut-off Current

=5V, I =0

DC Current Gain

=5V, I =1mA

280

0.14

0.84

0.63

2.2

1000

0.3

1.0

0.7

3.5

(sat)

(on)

Collector-Base Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter On Voltage

Output Capacitance

=100mA, I =5mA

=5V, I =2mA

0.58

150

=10V, I =0

f=1MHz

Current Gain Bandwidth Product

Noise Figure

=5V, I =10mA

270

0.9

MHz

=5V, I =0.2mA

f=1KHz, R =2KΩ

Classification

60 ~ 150

100 ~ 300

200 ~ 600

400 ~ 1000

Rev. A, February 2000

12 3 4

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