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SS8P2CLHM3/86A PDF预览

SS8P2CLHM3/86A

更新时间: 2024-11-14 18:11:47
品牌 Logo 应用领域
威世 - VISHAY PC功效瞄准线光电二极管
页数 文件大小 规格书
5页 101K
描述
DIODE 4 A, 20 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPC, 3 PIN, Rectifier Diode

SS8P2CLHM3/86A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-277
包装说明:R-PDSO-F3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.19
其他特性:FREEWHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.45 VJEDEC-95代码:TO-277A
JESD-30 代码:R-PDSO-F3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:120 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:4 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:20 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SS8P2CLHM3/86A 数据手册

 浏览型号SS8P2CLHM3/86A的Datasheet PDF文件第2页浏览型号SS8P2CLHM3/86A的Datasheet PDF文件第3页浏览型号SS8P2CLHM3/86A的Datasheet PDF文件第4页浏览型号SS8P2CLHM3/86A的Datasheet PDF文件第5页 
SS8P2CL, SS8P3CL  
Vishay General Semiconductor  
www.vishay.com  
High Current Density Surface Mount  
Schottky Barrier Rectifier  
FEATURES  
eSMP® Series  
Available  
• Very low profile - typical height of 1.1 mm  
• Ideal for automated placement  
• Low forward voltage drop, low power losses  
• High efficiency  
K
• Low thermal resistance  
1
• Meets MSL level 1, per J-STD-020  
2
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHM3  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TO-277A (SMPC)  
Anode 1  
K
Cathode  
Anode 2  
TYPICAL APPLICATIONS  
For use in low voltage high frequency inverters, freewheeling  
diodes, DC/DC converters, and polarity protection  
application.  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 x 4.0 A  
20 V, 30 V  
120 A  
MECHANICAL DATA  
VRRM  
Case: TO-277A (SMPC)  
IFSM  
Molding compound meets UL 94 V-0 flammability rating  
EAS  
20 mJ  
Base P/N-M3  
-
halogen-free, RoHS-compliant, and  
VF at IF = 4 A  
TJ max.  
0.41 V  
commercial grade  
150 °C  
TO-277A  
Single  
Base P/NHM3  
- halogen-free, RoHS-compliant and  
Package  
Diode variations  
AEC-Q101 qualified  
Base P/NHM3_X - halogen-free, RoHS-compliant and  
AEC-Q101 qualified   
(“_X” denotes revision code e.g. A, B,.....)  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix  
meets JESD 201 class 2 whisker test  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
SS8P2CL  
S82C  
20  
SS8P3CL  
S83C  
30  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
VRRM  
IF(AV)  
V
A
total device  
Maximum average forward rectified current (fig. 1)  
per diode  
8.0  
4.0  
Peak forward surge current 10 ms single half sine-wave  
IFSM  
120  
20  
A
superimposed on rated load  
Non-repetitive avalanche energy at 25 °C, IAS = 2 A per diode  
Operating junction and storage temperature range  
EAS  
mJ  
°C  
TJ, TSTG  
-55 to +150  
Revision: 10-Dec-14  
Document Number: 89030  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

SS8P2CLHM3/86A 替代型号

型号 品牌 替代类型 描述 数据表
SS8P2CLHM3_A/H VISHAY

类似代替

Rectifier Diode, Schottky, 1 Phase, 2 Element, 4A, 20V V(RRM), Silicon, TO-277A,

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