Datasheet > SS65B

SS65B

更新时间： 2024-11-21 12:57:07

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	381K
描述
6A Patch Schottky diode 50V SMB series

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中文翻译

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数据手册

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SS65B 数据手册

SS62B - SS610B

SURFACE MOUNT SCHOTTKY BARRIER DIODES

VOLTAGE RANGE: 20 - 100V

CURRENT: 6.0 A

Features

Schottky Barrier Chip

Ideally Suited for Automatic Assembly

Low Power Loss, High Efficiency

For Use in Low Voltage Application

Guard Ring Die Construction

Plastic Case Material has UL Flammability

Classification Rating 94V-O

SMB(DO-214AA)

Dim

Min

3.30

4.06

1.91

0.15

5.00

0.10

0.76

2.00

Max

3.94

4.70

2.21

0.31

5.59

0.20

1.52

2.62

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Mechanical Data

Case: SMB/DO-214AA, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.093 grams (approx.)

All Dimensions in mm

T_A= 25ꢀC unless otherwise specified

Maximum Ratings and Electrical Characteristics

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Characteristic

Symbol SS62B SS63B SS64B SS65B SS66B SS68B SS69B SS610B Unit

RRM

Peak Repetitive Reverse Voltage

RWM

Working Peak Reverse Voltage

DC Blocking Voltage

100

R(RMS)

RMS Reverse Voltage

Average Rectified Output Current @T_L= 90°C

6.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

FSM

150

= 6.0A

Forward Voltage

@I_F

0.55

0.70

1.0

0.85

Peak Reverse Current

@T_A= 25°C

R^ꢀ

Typical Thermal Resistance (Note 1)

Operating Temperature Range

°C/W

-65 to +125

-65 to +150

300

°C

STG

Storage Temperature Range

Typical Junction capacitance(NOTE1)

Note: 1. Mounted on P.C. Board with 14mm²copper pad area.

2.Measured at 1.0 MHZ and applied reverse voltage of 4.0 v

1 of 2

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