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SS6625 PDF预览

SS6625

更新时间: 2024-11-21 15:52:51
品牌 Logo 应用领域
SENSITRON 二极管
页数 文件大小 规格书
5页 350K
描述
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, 106, 2 PIN

SS6625 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:106, 2 PIN
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.82应用:POWER
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.95 VJESD-30 代码:O-XALF-W2
最大非重复峰值正向电流:15 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:1.5 A封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:1000 V最大反向恢复时间:0.06 µs
子类别:Rectifier Diodes表面贴装:NO
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SS6625 数据手册

 浏览型号SS6625的Datasheet PDF文件第2页浏览型号SS6625的Datasheet PDF文件第3页浏览型号SS6625的Datasheet PDF文件第4页浏览型号SS6625的Datasheet PDF文件第5页 
1N6620/U/US thru 1N6625/U/US  
ULTRAFAST RECOVERY RECTIFIER  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DATA SHEET 5089, REV. A.2  
AV AI L AB L E AS  
1N, JAN, JANTX, JANTXV  
JANS  
Ultrafast Recovery Rectifier  
Qualified per MIL-PRF-19500/585  
JAN EQUIVALENT*  
SJ*, SX*, SV*, SS*  
Hermetic, non-cavity glass package  
Metallurgically bonded  
Operating and storage temperature: -65oC to +175o  
All parts are 100% hot solder dipped  
JAN/ JANTX/ JANTXV available per MIL-PRF-19500/585  
JANS Plusremoves atypical/out of family VF  
MAX. RATINGS / ELECTRICAL CHARACTERISTICS All ratings are at TA = 25oC unless otherwise specified.  
Rating  
WORKING PEAK REVERSE VOLTAGE  
1N6620, U, US  
Symbol  
Condition  
Max  
Units  
200  
400  
600  
800  
900  
1000  
1N6621, U ,US  
1N6622, U, US  
1N6623, U, US  
1N6624 ,U, US  
VRWM  
Volts  
1N6625, U, US  
AVERAGE RECTIFIED FORWARD CURRENT  
1N6620, U, US thru 1N6622, U, US  
1N6623, U, US thru 1N6625, U, US  
PEAK FORWARD SURGE CURRENT  
1N6620, U, US thru 1N6624,U, US  
1N6625, U, US  
Io  
1.2  
1.0  
Amps  
A(pk)  
IFSM  
Tp=8.3ms  
Tj = 25 oC  
Tj = 150 oC  
20  
15  
MAXIMUM REVERSE CURRENT  
1N6620, U, US thru 1N6624,U, US  
1N6625, U, US  
MAXIMUM REVERSE CURRENT  
1N6620, U, US thru 1N6624,U, US  
1N6625, U, US  
IR @ VRWM  
IR @ VRWM  
0.5  
1.0  
Amps  
Amps  
150  
200  
MAX. PEAK FORWARD VOLTAGE (PULSED)  
1N6620, U, US thru 1N6622,U, US  
1N6623,U, US & 1N6624,U, US  
1N6625, U, US  
IF=2.0A  
IF=1.5A  
IF=1.5A  
1.60  
1.80  
1.95  
VFM  
Volts  
A(pk)  
ns  
PEAK RECOVERY CURRENT  
1N6620, U, US thru 1N6622,U, US  
1N6623,U, US & 1N6624,U, US  
1N6625, U, US  
IF=2A,  
100A/  
3.5  
4.2  
5.0  
IRM  
MAXIMUM REVERSE RECOVERY TIME  
1N6620, U, US thru 1N6622,U, US  
1N6623,U, US & 1N6624,U, US  
1N6625, U, US  
IF=0.5A  
IRM =1.0A  
30  
50  
60  
Trr  
FORWARD RECOVERY VOLTAGE  
1N6620, U, US thru 1N6622,U, US  
1N6623,U, US & 1N6624,U, US  
1N6625, U, US  
IF=0.5A  
tr=12ns  
12  
18  
30  
VFRM  
Volts  
THERMAL RESISTANCE (Axial)  
1N6620 thru 1N6625  
THERMAL RESISTANCE (MELF)  
1N6620U,US thru 1N6625U,US  
L=.375  
L=0  
oC/W  
oC/W  
RJL  
38  
13  
RJEC  
*Sensitron equivalent diodes are manufactured and screened to MIL-PRF-19500 flow and guidelines starting  
from wafer fabrication through assembly and testing using our specification 7700-4093.  
©2012 Sensitron Semiconductor 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681  
PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com  

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