Datasheet > SS5809US

SS5809US

更新时间： 2024-11-13 15:52:51

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SS5809US 数据手册

1N5807/US, 1N5809/US, 1N5811/US

SENSITRON

___

ULTRAFAST RECOVERY

RECTIFIERS

______________________________________________________________________________________

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 127, REV. H.5

AV AI L AB L E AS

1N, JAN, JANTX, JANTXV

JANS

JAN EQUIVALENT*

SJ*, SX*, SV*, SS*

Ultrafast Recovery Rectifiers

Qualified per MIL-PRF-19500/477

DESCRIPTION:

This voidless hermetically sealed ultrafast recovery rectifier diode series is military qualified per

Mil-PRF-19500/477 and is targeted for commerical and military aircraft, military vehicles,

shipboard markets, space and all other high reliability applications.

FEATURES / BENEFITS:

MAXIMUM RATINGS



Hermetic, non-cavity glass package

Category I Metallurgically bonded

All devices are 100% hot solder dipped

JAN/ JANTX/JANTXV available per

MIL-PRF-19500/477



Operating and Storage Temperature: -65^oC to

+175^oC

Thermal Resistance: 22 ^oC (junction to lead)

Thermal Resistance: 6.5 ^oC (junction to endcap)

Forward surge current:125A @ 8.3 ms half-sine



“JANS Plus” removes atypical/out of family V_F

ELECTRICAL CHARACTERISTICS

TYPE

NUMBER

WORKING

PEAK

REVERSE

VOLTAGE

AVG

MAXIMUM

REVERSE

CURRENT

@ PIV

MAX. PEAK

FORWARD

VOLTAGE

(PULSED)

V_F@ 1A

MAXIMUM

SURGE

MAXIMUM

REVERSE

RECTIFIED

CURRENT¹

CURRENT²RECOVERY

I_FSM

TIME³

T_rr

Amps

Amps

Volts

100

150

Amps

125

nsec

55C

25C

125C

1N5807/US

1N5809/US

1N5811/US

6.0

525

.875

Note 1: T_EC= T_Lat L=0 or T_{end tab}f or US suffix devices. Derate at 60mA/C for T_Labove 75C.

Note 2: I_o= 3A, 8.3ms surge

Note 3: I_F=1A, I_RM=1A, I_R(REC)=.10A

*Sensitron space equivalent diodes are manufactured and screened to MIL-PRF-19500 flow and guidelines starting

from wafer fabrication through assembly and testing using our internal specification.

Phone (631) 586 7600 Fax (631) 242 9798  www.sensitron.com  sales@sensitron.com

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