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SS26T3G PDF预览

SS26T3G

更新时间: 2024-11-19 04:02:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 102K
描述
Surface Mount Schottky Power Rectifier

SS26T3G 数据手册

 浏览型号SS26T3G的Datasheet PDF文件第2页浏览型号SS26T3G的Datasheet PDF文件第3页浏览型号SS26T3G的Datasheet PDF文件第4页 
SS26  
Surface Mount  
Schottky Power Rectifier  
SMB Power Surface Mount Package  
. . . employing the Schottky Barrier principle in a metaltosilicon  
power rectifier. Features epitaxial construction with oxide passivation  
and metal overlay contact. Ideally suited for low voltage, high  
frequency switching power supplies; free wheeling diodes and  
polarity protection diodes.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
Features  
2.0 AMPERES  
60 VOLTS  
Compact Package with JBend Leads Ideal for Automated Handling  
Highly Stable Oxide Passivated Junction  
Guardring for Overvoltage Protection  
Low Forward Voltage Drop  
PbFree Package is Available  
Mechanical Characteristics:  
Case: Molded Epoxy  
Epoxy Meets UL 94, VO at 0.125 in  
Weight: 95 mg (approximately)  
Cathode Polarity Band  
SMB  
CASE 403A  
PLASTIC  
Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
MARKING DIAGRAM  
Available in 12 mm Tape, 2500 Units per 13Reel, Add “T3” Suffix  
to Part Number  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
SS26  
ESD Ratings: Human Body Model = 3B  
Machine Model = C  
SS26 = Device Code  
Marking: SS26  
MAXIMUM RATINGS  
ORDERING INFORMATION  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
RWM  
V
60  
V
Device  
SS26T3  
Package  
Shipping  
RRM  
V
R
SMB  
2500 / Tape & Reel  
2500 / Tape & Reel  
SS26T3G  
SMB  
(PbFree)  
Average Rectified Forward Current  
I
2.0  
40  
A
A
O
(At Rated V , T = 95°C)  
R
L
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
NonRepetitive Peak Surge Current  
(Surge Applied at Rated Load Condi-  
tions Halfwave, Single Phase, 60 Hz)  
I
FSM  
Storage/Operating Case Temperature  
Operating Junction Temperature  
Voltage Rate of Change  
T
stg  
, T  
C
55 to +150  
55 to +150  
10,000  
°C  
°C  
T
J
dv/dt  
V/ms  
(Rated V , T = 25°C)  
R
J
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
February, 2005 Rev. 2  
SS26/D  

SS26T3G 替代型号

型号 品牌 替代类型 描述 数据表
MBRS260T3G ONSEMI

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