SS1P3-E3/85A

更新时间： 2024-09-30 07:03:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	110K
描述
High Current Density Surface Mount Schottky Barrier Rectifiers

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SS1P3-E3/85A 数据手册

New Product

SS1P3 & SS1P4

Vishay General Semiconductor

High Current Density Surface Mount

Schottky Barrier Rectifiers

FEATURES

• Very low profile - typical height of 1.0 mm

• Ideal for automated placement

eSMP^TMSeries

• Low forward voltage drop, low power

losses

• High efficiency

• Low thermal resistance

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

DO-220AA (SMP)

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, dc-to-dc converters, and polarity

protection applications.

PRIMARY CHARACTERISTICS

I_F(AV)

1 A

(Note: These devices are not Q101 qualified.)

V_RRM

I_FSM

30 V, 40 V

30 A

MECHANICAL DATA

Case: DO-220AA (SMP)

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E_AS

10 mJ

V_F

0.40 V, 0.45 V

150 °C

T_Jmax.

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

Polarity: Color band denotes the cathode end

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

SS1P3

SS1P4

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (Fig. 1)

V_RRM

I_F(AV)

1.0

Peak forward surge current 10 ms single half sine-wave superimposed

on rated load

I_FSM

Non-repetitive avalanche energy at I_AS= 1.5 A, L = 10 mH, T_J= 25 °C

Voltage rate of change (rated V_R)

E_AS

dV/dt

V/µs

°C

10 000

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

SS1P3

SS1P4

UNIT

Maximum instantaneous

forward voltage ⁽¹⁾

I_F= 1.0 A

T_J= 25 °C

T_J= 125 °C

0.50

0.40

0.53

0.45

V_F

T_J= 25 °C

T_J= 125 °C

150

µA

(2)

Maximum reverse current at rated V_R

Typical junction capacitance

I_R

4.0 V, 1 MHz

C_J

Notes:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width ≤ 40 ms

Document Number: 88935

Revision: 19-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5

中文翻译

下载PDF

与SS1P3-E3/85A相关器件

型号	品牌	获取价格	描述	数据表
SS1P3L	VISHAY	获取价格	Low VF High Current Density Surface Mount Schottky Barrier Rectifiers
SS1P3L	TI	获取价格	LM2736 Thin SOT 750mA Load Step-Down DC-DC Regulator
SS1P3L_11	VISHAY	获取价格	Low VF High Current Density Surface Mount Schottky Barrier Rectifiers
SS1P3L_15	VISHAY	获取价格	Low VF High Current Density Surface Mount Schottky Barrier Rectifiers
SS1P3L-E3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM),
SS1P3L-E3/84A	VISHAY	获取价格	Low VF High Current Density Surface Mount Schottky Barrier Rectifiers
SS1P3L-E3/85A	VISHAY	获取价格	Low VF High Current Density Surface Mount Schottky Barrier Rectifiers
SS1P3LHE3/84A	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1.5A, 30V V(RRM),
SS1P3LHE3/85A	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1.5A, 30V V(RRM),
SS1P3L-HE3/85A	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 1.5A, 30V V(RRM), Silicon, DO-220AA, ROHS C

与SS1P3-E3/85A相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

30
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

27
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

26
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

35

产品中心

服务支持

精选活动

关于我们

帮助中心

SS1P3-E3/85A

SS1P3-E3/85A 数据手册

与SS1P3-E3/85A相关器件

与SS1P3-E3/85A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SS1P3-E3/85A

SS1P3-E3/85A 数据手册

与SS1P3-E3/85A相关器件

与SS1P3-E3/85A相关文章

您还可以找

您在本页遇到什么问题？