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SS18G-TP PDF预览

SS18G-TP

更新时间: 2024-11-13 13:00:07
品牌 Logo 应用领域
美微科 - MCC 整流二极管
页数 文件大小 规格书
2页 355K
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SS18G-TP 数据手册

 浏览型号SS18G-TP的Datasheet PDF文件第2页 
M C C  
SS12  
THRU  
SS110  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
·
·
·
·
·
·
Schottky Barrier Rectifier  
Guard Ring Protection  
Low Forward Voltage  
Reverse Energy Tested  
High Current Capability  
1 Amp Schottky  
Rectifier  
20 to 100 Volts  
Extremely Low Thermal Resistance  
DO-214AC  
(SMAJ) (High Profile)  
Maximum Ratings  
·
·
·
Operating Temperature: -55°C to +125°C  
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance; 35°C/W Junction To Lead  
H
Cathode Band  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
20V  
Maximum  
RMS  
Voltage  
Maximum  
DC  
Blocking  
Voltage  
20V  
30V  
40V  
50V  
60V  
80V  
100V  
J
SS12  
SS13  
SS14  
SS15  
SS16  
SS18  
SS110  
SS12  
SS13  
SS14  
SS15  
SS16  
SS18  
SS110  
14V  
21V  
28V  
35V  
42V  
56V  
70V  
30V  
40V  
50V  
60V  
80V  
100V  
A
C
E
D
B
F
G
Electrical Characteristics @ 25°C Unless Otherwise Specified  
DIMENSIONS  
Average Forward  
Current  
IF(AV)  
1.0A  
TJ = 100°C  
INCHES  
MIN  
.078  
.067  
.002  
---  
.035  
.065  
.205  
.160  
.100  
MM  
MIN  
1.98  
1.70  
.05  
---  
.89  
1.65  
5.21  
4.06  
2.57  
DIM  
A
B
C
D
E
MAX  
.116  
.089  
.008  
.02  
.055  
.096  
.224  
.180  
.112  
MAX  
2.95  
2.25  
.20  
NOTE  
Peak Forward Surge  
Current  
IFSM  
30A  
8.3ms, half sine  
.51  
Maximum  
Instantaneous  
Forward Voltage  
1.40  
2.45  
5.69  
4.57  
2.84  
F
G
H
J
SS12  
SS13  
SS14  
VF  
.45V  
.55V  
.60V  
.70V  
.85V  
IFM = 1.0A;  
TJ = 25°C*  
SUGGESTED SOLDER  
PAD LAYOUT  
SS15-16  
SS18-110  
0.090”  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
IR  
0.5mA  
20mA  
TA = 25°C  
TA = 100°C  
0.085”  
Typical Junction  
Capacitance  
SS12 - SS16  
SS18-SS110  
CJ  
110pF  
20pF  
Measured at  
1.0MHz, VR=4.0V  
0.070”  
*Pulse test: Pulse width 300 msec, Duty cycle 2%  
www.mccsemi.com  

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