Datasheet > SS10PH10-M3-87A

SS10PH10-M3-87A

更新时间： 2024-11-29 09:06:31

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
5页	97K
描述
High Current Density Surface Mount High Voltage Schottky Rectifiers

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SS10PH10-M3-87A 数据手册

New Product

SS10PH9, SS10PH10

Vishay General Semiconductor

High Current Density Surface Mount

High Voltage Schottky Rectifiers

FEATURES

• Very low profile - typical height of 1.1 mm

eSMP^®Series

• Ideal for automated placement

• Guardring for overvoltage protection

• High barrier technology, T_J= 175 °C maximum

• Low leakage current

• Meets MSL level 1, per J-STD-020

• AEC-Q101 qualified

TO-277A (SMPC)

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

Anode 1

Anode 2

• Halogen-free according to IEC 61249-2-21 definition

Cathode

PRIMARY CHARACTERISTICS

MECHANICAL DATA

I_F(AV)

10 A

Case: TO-277A (SMPC)

Molding compound meets UL 94 V-0 flammability rating

V_RRM

90 V, 100 V

200 A

Base P/N-M3

- halogen-free, RoHS compliant, and

I_FSM

commercial grade

Base P/NHM3 - halogen-free, RoHS compliant, and

automotive grade

E_AS

20 mJ

V_Fat I_F= 10 A

I_R

0.661 V

0.3 μA

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

T_Jmax.

175 °C

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching

mode

power supplies, freewheeling diodes, DC/DC converters or

polarity protection application.

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

SS10PH9

10H9

SS10PH10

10H10

100

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

V_RRM

I_F(AV)

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

Non-repetitive avalanche energy

at I_AS= 2.0 A, T_J= 25 °C

E_AS

°C

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 175

Document Number: 89000

Revision: 19-Apr-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

与SS10PH10-M3-87A相关器件

型号	品牌	获取价格	描述	数据表
SS10PH45	VISHAY	获取价格	High Current Density Surface Mount Schottky Rectifier
SS10PH45_11	VISHAY	获取价格	High Current Density Surface Mount Schottky Rectifier
SS10PH45_15	VISHAY	获取价格	High Current Density Surface Mount Schottky Rectifier
SS10PH45-E3/86A	VISHAY	获取价格	High Current Density Surface Mount Schottky Rectifier
SS10PH45-E3/87A	VISHAY	获取价格	High Current Density Surface Mount Schottky Rectifier
SS10PH45HE3/86A	VISHAY	获取价格	High Current Density Surface Mount Schottky Rectifier
SS10PH45HE3/87A	VISHAY	获取价格	High Current Density Surface Mount Schottky Rectifier
SS10PH45HM3/86A	VISHAY	获取价格	High Current Density Surface Mount Schottky Rectifier
SS10PH45HM3/87A	VISHAY	获取价格	High Current Density Surface Mount Schottky Rectifier
SS10PH45HM3_A/H	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 45V V(RRM), Silicon, TO-277A, HALOGEN

与SS10PH10-M3-87A相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

49
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

38
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

67
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

62

产品中心

服务支持

精选活动

关于我们

帮助中心

SS10PH10-M3-87A

SS10PH10-M3-87A 数据手册

与SS10PH10-M3-87A相关器件

与SS10PH10-M3-87A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SS10PH10-M3-87A

SS10PH10-M3-87A 数据手册

与SS10PH10-M3-87A相关器件

与SS10PH10-M3-87A相关文章

您还可以找

您在本页遇到什么问题？