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SS10PH45

更新时间: 2024-11-29 06:13:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 111K
描述
High Current Density Surface Mount Schottky Rectifier

SS10PH45 数据手册

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New Product  
SS10PH45  
Vishay General Semiconductor  
High Current Density Surface Mount Schottky Rectifier  
FEATURES  
eSMPTM Series  
• Very low profile - typical height of 1.1 mm  
• Ideal for automated placement  
• Guardring for overvoltage protection  
K
• High barrier technology, T = 175 °C  
J
maximum  
1
• Low leakage current  
2
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
TO-277A (SMPC)  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Anode 1  
Anode 2  
K
Cathode  
Halogen-free  
MECHANICAL DATA  
Case: TO-277A (SMPC)  
Molding compound meets UL 94V-0 flammability  
rating.  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, high reliability/  
automotive grade (AEC-Q101 qualified)  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
EAS  
10 A  
45 V  
200 A  
20 mJ  
VF at IF = 10 A  
IR  
0.56 V  
5.5 µA  
175 °C  
Base P/N-M3 - halogen-free and RoHS compliant,  
commercial grade  
TJ max.  
Base P/NHM3 - halogen-free and RoHS compliant,  
high reliability/automotive grade (AEC-Q101 qualified)  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 and M3 suffix meets JESD 201 class 1A whisker  
test, HE3 and HM3 suffix meets JESD 201 class 2  
whisker test  
TYPICAL APPLICATIONS  
For use in high frequency rectifier of switching  
mode power supplies, freewheeling diodes, dc-to-dc  
converters or polarity protection application.  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
SS10PH45  
10H45  
45  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (Fig. 1)  
VRRM  
IF(AV)  
V
A
10  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
200  
A
Non-repetitive avalanche energy at IAS = 2 A, TJ = 25 °C  
Operating junction and storage temperature range  
EAS  
J, TSTG  
20  
mJ  
°C  
T
- 55 to + 175  
Document Number: 89057  
Revision: 30-Jul-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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