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SRVBS260NT3G

更新时间： 2024-12-02 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管
页数 文件大小 规格书
4页 136K
描述
Schottky Power Rectifier, Surface Mount, 2.0 A, 60 V, SMB Package

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SRVBS260NT3G 数据手册

 浏览型号SRVBS260NT3G的Datasheet PDF文件第2页浏览型号SRVBS260NT3G的Datasheet PDF文件第3页浏览型号SRVBS260NT3G的Datasheet PDF文件第4页 
MBRS260T3  
Surface Mount  
Schottky Power Rectifier  
SMB Power Surface Mount Package  
This device employs the Schottky Barrier principle in a  
metal−to−siliconpower rectifier. Features epitaxial construction with  
oxide passivation and metal overlay contact. Ideally suited for low  
voltage, high frequency switching power supplies; free wheeling  
diodes and polarity protection diodes.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
2.0 AMPERES, 60 VOLTS  
Features  
• Compact Package with J−Bend Leads Ideal for Automated Handling  
• Highly Stable Oxide Passivated Junction  
• Guard−Ring for Over−Voltage Protection  
• Low Forward Voltage Drop  
SMB  
CASE 403A  
PLASTIC  
• Pb−Free Package is Available  
Mechanical Characteristics  
• Case: Molded Epoxy  
MARKING DIAGRAM  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• Weight: 95 mg (Approximately)  
AYWW  
B26G  
G
• Cathode Polarity Band  
• Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
• ESD Ratings: Machine Model = C  
Human Body Model = 3B  
B26  
A
Y
= Specific Device Code  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
WW  
G
(Note: Microdot may be in either location)  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
ORDERING INFORMATION  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
60  
V
RRM  
†
Device  
Package  
Shipping  
RWM  
V
R
MBRS260T3  
SMB  
2500/Tape & Reel  
2500/Tape & Reel  
Average Rectified Forward Current  
I
O
2.0  
60  
A
A
MBRS260T3G  
SMB  
(At Rated V , T = 95°C)  
R
L
(Pb−Free)  
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
FSM  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Storage Temperature Range  
Operating Junction Temperature  
Voltage Rate of Change  
T
stg  
−55 to +150  
−55 to +125  
10,000  
°C  
°C  
T
J
dv/dt  
V/ms  
(Rated V , T = 25°C)  
R
J
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
May, 2010 − Rev. 5  
MBRS260T3/D  
1234

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