SRVBSS26NT3G

更新时间： 2024-12-02 11:01:35

品牌	Logo	应用领域
安森美 - ONSEMI		整流二极管
页数	文件大小	规格书
4页	102K
描述
60 V, 2.0 A Schottky Rectifier

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SRVBSS26NT3G 数据手册

SS26

Surface Mount

Schottky Power Rectifier

SMB Power Surface Mount Package

. . . employing the Schottky Barrier principle in a metal−to−silicon

power rectifier. Features epitaxial construction with oxide passivation

and metal overlay contact. Ideally suited for low voltage, high

frequency switching power supplies; free wheeling diodes and

polarity protection diodes.

http://onsemi.com

SCHOTTKY BARRIER

RECTIFIER

Features

2.0 AMPERES

60 VOLTS

• Compact Package with J−Bend Leads Ideal for Automated Handling

• Highly Stable Oxide Passivated Junction

• Guardring for Overvoltage Protection

• Low Forward Voltage Drop

• Pb−Free Package is Available

Mechanical Characteristics:

• Case: Molded Epoxy

• Epoxy Meets UL 94, V−O at 0.125 in

• Weight: 95 mg (approximately)

• Cathode Polarity Band

SMB

CASE 403A

PLASTIC

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

MARKING DIAGRAM

• Available in 12 mm Tape, 2500 Units per 13″ Reel, Add “T3” Suffix

to Part Number

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

SS26

• ESD Ratings: Human Body Model = 3B

Machine Model = C

SS26 = Device Code

• Marking: SS26

MAXIMUM RATINGS

ORDERING INFORMATION

Rating

Symbol

Value

Unit

†

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RWM

Device

SS26T3

Package

Shipping

RRM

SMB

2500 / Tape & Reel

SS26T3G

SMB

(Pb−Free)

Average Rectified Forward Current

2.0

(At Rated V , T = 95°C)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Condi-

tions Halfwave, Single Phase, 60 Hz)

FSM

Storage/Operating Case Temperature

Operating Junction Temperature

Voltage Rate of Change

stg

, T

−55 to +150

10,000

°C

dv/dt

V/ms

(Rated V , T = 25°C)

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.



Semiconductor Components Industries, LLC, 2005

Publication Order Number:

February, 2005 − Rev. 2

SS26/D

12 3 4

中文翻译

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