Datasheet > SR5509

SR5509

更新时间： 2024-11-09 06:13:43

品牌	Logo	应用领域
VANLONG		谐振器
页数	文件大小	规格书
2页	87K
描述
426.55 MHz One Port SAW Resonator

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中文翻译

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SR5509 数据手册

426.55 MHz One Port SAW Resonator

•

Ideal for 426.55 MHz Transmitters

Very Low Insertion Loss

Quartz Stability

SR5509

Ultra Miniature Ceramic SMD Package (QCC8C)

Absolute Maximum Rating (Ta=25°C)

Parameter

CW RF Power Dissipation

Rating

Unit

dBm

DC Voltage

V_DC

T_A

T_stg

±30

Operating Temperature Range

Storage Temperature Range

-10 ~ +60

-40 ~ +85

°C

Electronic Characteristics

Parameter

Sym

f_c

Minimum

Typical

426.55

Maximum

Unit

MHz

KHz

± 75

2.0

Frequency (25°C)

Nominal Frequency

Tolerance from 426.55 MHz

∆f_c

Insertion Loss

Quality Factor

1.5

Unloaded Q-Value

Q_u

Q_L

8,140

1,300

50Ω Loaded Q-Value

Turnover Temperature

Turnover Frequency

Temperature Stability

T_o

f_o

f_c

°C

KHz

ppm/°C²

ppm/yr

MΩ

Frequency Temperature Coefficient

Absolute Value during the First Year

FTC

0.032

Frequency Aging

|f_A|

DC Insulation Resistance Between any Two Pins

1.0

RF Equivalent RLC Model

Motional Resistance

Motional Inductance

Motional Capacitance

Shunt Static Capacitance

R_M

L_M

Ω

µH

57.7912

2.4131

2.55

C_M

C_o

2.25

2.85

NS = Not Specified

Note:

The measurement includes case parasitic capacitance.

The frequency f_cis the frequency of minimum IL with the resonator

in the specified test fixture in a 50Ω test system with VSWR ≤ 1.2:1.

Derived mathematically from one or more of the following directly

measured parameters: f_c, IL, 3 dB bandwidth, f_Cversus T_C, and Co.

Unless noted otherwise, case temperature TC = +25°C±2°C.

The specifications of this device are based on the test circuit shown

above and subject to change or obsolescence without notice.

Frequency aging is the change in fC with time and is specified at

+65°C or less. Aging may exceed the specification for prolonged

temperatures above +65°C. Typically, aging is greatest the first year

after manufacture, decreasing in subsequent years.

Typically, equipment utilizing this device requires emissions testing

and government approval, which is the responsibility of the

equipment manufacturer.

Turnover temperature, T0, is the temperature of maximum (or

turnover) frequency, f0. The nominal frequency at any case

temperature, TC, may be calculated from: f = f_o[1 - FTC (T_O- T_C)²].

Our liability is only assumed for the Surface Acoustic Wave (SAW)

component(s) per se, not for applications, processes and circuits

implemented within components or assemblies.

This equivalent RLC model approximates resonator performance

near the resonant frequency and is provided for reference only. The

capacitance C_Ois the measured static (nonmotional) capacitance

between input terminal and ground or output terminal and ground.

10. For questions on technology, prices and delivery, please contact our

sales offices or e-mail to sales@vanlong.com.

Phone: +86 10 6301 4184

Fax: +86 10 6301 9167

Email: sales@vanlong.com

Web: http://www.vanlong.com

SR5509

中文翻译

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SR550-B	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 50V V(RRM), Silicon, DO-201AD, ROHS COM
SR550H31	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 50V V(RRM), Silicon, DO-201AD,
SR550H31-1	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 50V V(RRM), Silicon, DO-201AD,
SR550H32-1	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 50V V(RRM), Silicon, DO-201AD,
SR550H33	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 50V V(RRM), Silicon, DO-201AD,
SR550H34	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 50V V(RRM), Silicon, DO-201AD,
SR550H35	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 50V V(RRM), Silicon, DO-201AD,
SR550H36	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 50V V(RRM), Silicon, DO-201AD,
SR550H36-1	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 50V V(RRM), Silicon, DO-201AD,
SR550H36-2	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 50V V(RRM), Silicon, DO-201AD,

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