Datasheet > SR5150-G

SR5150-G

更新时间： 2024-11-12 07:17:55

品牌	Logo	应用领域
上华 - COMCHIP		/
页数	文件大小	规格书
3页	55K
描述
Schottky Barrier Rectifier

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中文翻译

获取价格

数据手册

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SR5150-G 数据手册

Schottky Barrier Rectifier

Comchip

S M D D i o d e S p e c i a l i s t

SR520-G Thru. SR5200-G

Forward current: 5.0A

Reverse voltage: 20 to 200V

RoHS Device

DO-27

Features

0.052(1.30)

0.048(1.20)

-Axial lead type devices for through hole design.

-Low power loss, high efficiency.

DIA.

1.0(25.4) min.

-High current capability, Low forward voltage drop.

-High surge capability.

-Guardring for overvoltage protection.

-Ultra high-speed switching.

-Silicon epitaxial planar chip, metal silicon junction.

-Lead-free part meets environmental standards of

MIL-STD-19500/228

0.375(9.50)

0.285(7.20)

0.220(5.60)

0.197(5.00)

DIA.

Mechanical Data

1.0(25.4) min.

-Case: Molded plastic, DO-201AD/DO-27

-Epoxy: UL94V-0 rate flame retardant.

-Lead: Axial lead, solderable per MIL-STD-202,

Method 208 guranteed.

-Polarity: color band denoted cathode end.

-Weight: 1.10 gram (approx.).

Dimensions in inches and (millimeter)

Maximum Ratings and Electrical Characteristics

Ratings at Ta=25°C unless otherwise noted.

Single phase, half wave, 60Hz, resistive or inductive loaded.

For capacitive load, derate current by 20% .

SR520 SR540 SR560 SR5100 SR5150 SR5200

Parameter

Symbol

Unit

-G

Maximum recurrent peak reverse voltage

Maximum RMS voltage

VRRM

VRMS

VDC

100

150

200

105

150

0.87

140

200

0.90

Maximum DC blocking voltage

100

0.81

Maximum instantaneous forward voltage

at IF=5A,TA=25°C

0.50

0.55

0.75

Operating junction temperature range

-50 ~ +150

-50 ~ +175

°C

Symbol

Parameter

Conditions

MIN.

TYP.

MAX.

Unit

see Fig.1

Forward rectified current

Forward surge current

5.0

8.3ms single half sine-wave superimposed

on rate load (JEDEC method)

IFSM

125

VR =VRRM TA=25°C

VR =VRRM TA=100°C

0.5

Reverse Current

Thermal Resistance

Junction to ambient

RθJA

°C/W

Diode Junction capacitance f=1MHZ and applied 4V DC reverse Voltage

Storage temperature

380

°C

TSTG

-50

+175

REV:A

Page 1

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12 3

中文翻译

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