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SR5150-G PDF预览

SR5150-G

更新时间: 2024-10-01 07:17:55
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上华 - COMCHIP /
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3页 55K
描述
Schottky Barrier Rectifier

SR5150-G 数据手册

 浏览型号SR5150-G的Datasheet PDF文件第2页浏览型号SR5150-G的Datasheet PDF文件第3页 
Schottky Barrier Rectifier  
Comchip  
S M D D i o d e S p e c i a l i s t  
SR520-G Thru. SR5200-G  
Forward current: 5.0A  
Reverse voltage: 20 to 200V  
RoHS Device  
DO-27  
Features  
0.052(1.30)  
0.048(1.20)  
-Axial lead type devices for through hole design.  
-Low power loss, high efficiency.  
DIA.  
1.0(25.4) min.  
-High current capability, Low forward voltage drop.  
-High surge capability.  
-Guardring for overvoltage protection.  
-Ultra high-speed switching.  
-Silicon epitaxial planar chip, metal silicon junction.  
-Lead-free part meets environmental standards of  
MIL-STD-19500/228  
0.375(9.50)  
0.285(7.20)  
0.220(5.60)  
0.197(5.00)  
DIA.  
Mechanical Data  
1.0(25.4) min.  
-Case: Molded plastic, DO-201AD/DO-27  
-Epoxy: UL94V-0 rate flame retardant.  
-Lead: Axial lead, solderable per MIL-STD-202,  
Method 208 guranteed.  
-Polarity: color band denoted cathode end.  
-Weight: 1.10 gram (approx.).  
Dimensions in inches and (millimeter)  
Maximum Ratings and Electrical Characteristics  
Ratings at Ta=25°C unless otherwise noted.  
Single phase, half wave, 60Hz, resistive or inductive loaded.  
For capacitive load, derate current by 20% .  
SR520 SR540 SR560 SR5100 SR5150 SR5200  
Parameter  
Symbol  
Unit  
-G  
-G  
-G  
-G  
-G  
-G  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
VF  
20  
40  
60  
100  
150  
200  
V
V
V
V
14  
20  
28  
40  
42  
60  
70  
105  
150  
0.87  
140  
200  
0.90  
Maximum DC blocking voltage  
100  
0.81  
Maximum instantaneous forward voltage  
at IF=5A,TA=25°C  
0.50  
0.55  
0.75  
Operating junction temperature range  
TJ  
-50 ~ +150  
-50 ~ +175  
°C  
Symbol  
IO  
Parameter  
Conditions  
MIN.  
TYP.  
MAX.  
Unit  
A
see Fig.1  
Forward rectified current  
Forward surge current  
5.0  
8.3ms single half sine-wave superimposed  
on rate load (JEDEC method)  
IFSM  
125  
A
VR =VRRM TA=25°C  
VR =VRRM TA=100°C  
IR  
IR  
0.5  
20  
mA  
mA  
Reverse Current  
Thermal Resistance  
Junction to ambient  
RθJA  
CJ  
24  
°C/W  
Diode Junction capacitance f=1MHZ and applied 4V DC reverse Voltage  
Storage temperature  
380  
pF  
°C  
TSTG  
-50  
+175  
REV:A  
Page 1  
QW-BB027  

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