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SR305-AP PDF预览

SR305-AP

更新时间: 2024-11-06 13:13:59
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
2页 81K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2

SR305-AP 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-201AD
包装说明:O-PALF-W2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.1
Is Samacsys:N其他特性:LOW NOISE
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.72 V
JEDEC-95代码:DO-201ADJESD-30 代码:O-PALF-W2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:80 A元件数量:1
相数:1端子数量:2
最高工作温度:125 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:50 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SR305-AP 数据手册

 浏览型号SR305-AP的Datasheet PDF文件第2页 
M C C  
SR305  
THRU  
SR3010  
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21201 Itasca Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
·
·
·
·
Low Switching Noise  
3 Amp Schottky  
Barrier Rectifier  
50 to 100 Volts  
Low Forward Voltage Drop  
High Current Capability  
High Surge Current Capability  
Maximum Ratings  
DO-201AD  
·
·
·
Operating Temperature: -55°C to +125°C  
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance; 30°C/W Junction To Ambient  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
50V  
Maximum Maximum  
RMS  
DC  
Voltage  
Blocking  
Voltage  
D
SR305  
SR306  
SR308  
SR3010  
---  
---  
---  
---  
35V  
42V  
56V  
70V  
50V  
60V  
80V  
60V  
80V  
100V  
A
Cathode  
Mark  
100V  
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
3.0A  
TA = 85°C  
C
Peak Forward Surge  
Current  
IFSM  
80A  
8.3ms, half sine  
Maximum  
Instantaneous  
Forward Voltage  
SR305-306  
SR308-3010  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
DIMENSIONS  
VF  
IR  
.72V  
.85V  
IFM = 3.0A;  
TJ = 25°C*  
INCHES  
MIN  
---  
---  
.048  
1.000  
MM  
MIN  
DIM  
A
B
C
D
MAX  
.370  
.250  
.052  
---  
MAX  
9.50  
6.40  
1.30  
---  
NOTE  
---  
---  
1.0mA  
30mA  
TJ = 25°C  
TJ = 100°C  
1.20  
25.40  
Typical Junction  
Capacitance  
CJ  
200pF  
Measured at  
1.0MHz, VR=4.0V  
*Pulse test: Pulse width 300 msec, Duty cycle 1%  
www.mccsemi.com  

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