Datasheet > SQ4532EY

SQ4532EY

更新时间： 2024-11-16 12:22:59

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威世 - VISHAY		/
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描述
Automotive N-and P-Channel 30 V (D-S) 175 Â°C MOSFET

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SQ4532EY 数据手册

SQ4532EY

Vishay Siliconix

www.vishay.com

Automotive N-and P-Channel 30 V (D-S) 175 °C MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET^®Power MOSFET

• AEC-Q101 Qualified^c

PRODUCT SUMMARY

N-CHANNEL

P-CHANNEL

- 30

V_DS(V)

_DS(on)() at V_GS

10 V

0.055

0.100

5.6

0.070

4.5 V

0.190

• 100 % R_gand UIS Tested

I_D(A)

- 5.3

• Compliant to RoHS Directive 2002/95/EC

Configuration

N- and P-Pair

SO-8

Top View

N-Channel MOSFET

P-Channel MOSFET

ORDERING INFORMATION

Package

SO-8

SQ4532EY-T1-GE3

Lead (Pb)-free and Halogen-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

N-CHANNEL

P-CHANNEL

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

- 30

V_GS

_C= 25 °C

5.6

3.2

- 5.3

- 3

Continuous Drain Current

I_D

T_C= 125 °C

Continuous Source Current (Diode Conduction)

Pulsed Drain Current^a

I_S

- 3

I_DM

I_AS

- 21

- 9

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

E_AS

T_C= 25 °C

3.3

1.1

3.3

1.1

Maximum Power Dissipation^a

P_D

T_C= 125 °C

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

N-CHANNEL

P-CHANNEL

UNIT

Junction-to-Ambient

PCB Mount^b

110

105

°C/W

Junction-to-Foot (Drain)

R_thJF

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %.

b. When mounted on 1" square PCB (FR4 material).

c. Parametric verification ongoing.

S11-2112-Rev. B, 07-Nov-11

Document Number: 67068

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...15

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