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SQ4840EY-T1_GE3 PDF预览

SQ4840EY-T1_GE3

更新时间: 2024-11-16 19:51:19
品牌 Logo 应用领域
威世 - VISHAY 开关光电二极管晶体管
页数 文件大小 规格书
11页 266K
描述
Small Signal Field-Effect Transistor, 14.4A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

SQ4840EY-T1_GE3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G8Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:20 weeks 1 day
风险等级:1.72Samacsys Description:MOSFET 40V 10A 1.56W AEC-Q101 Qualified
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏极电流 (ID):14.4 A最大漏源导通电阻:0.009 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):280 pF
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SQ4840EY-T1_GE3 数据手册

 浏览型号SQ4840EY-T1_GE3的Datasheet PDF文件第2页浏览型号SQ4840EY-T1_GE3的Datasheet PDF文件第3页浏览型号SQ4840EY-T1_GE3的Datasheet PDF文件第4页浏览型号SQ4840EY-T1_GE3的Datasheet PDF文件第5页浏览型号SQ4840EY-T1_GE3的Datasheet PDF文件第6页浏览型号SQ4840EY-T1_GE3的Datasheet PDF文件第7页 
SQ4840EY  
Vishay Siliconix  
www.vishay.com  
Automotive N-Channel 40 V (D-S) 175 °C MOSFET  
FEATURES  
Halogen-free According to IEC 61249-2-21  
Definition  
PRODUCT SUMMARY  
VDS (V)  
40  
RDS(on) () at VGS = 10 V  
RDS(on) () at VGS = 4.5 V  
0.009  
0.012  
20.7  
• TrenchFET® Power MOSFET  
• AEC-Q101 Qualified  
ID (A)  
• 100 % Rg and UIS Tested  
Configuration  
Single  
• Compliant to RoHS Directive 2002/95/EC  
D
SO-8  
D
S
1
2
3
4
8
7
6
5
D
D
D
S
S
G
G
S
Top View  
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
SO-8  
SQ4840EY-T1-GE3  
Lead (Pb)-free and Halogen-free  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
VDS  
40  
V
Gate-Source Voltage  
VGS  
20  
TC = 25 °C  
20.7  
Continuous Drain Current  
ID  
TC = 125 °C  
12  
Continuous Source Current (Diode Conduction)  
Pulsed Drain Currenta  
IS  
6.5  
A
IDM  
IAS  
EAS  
82  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
30  
L = 0.1 mH  
TC = 25 °C  
45  
7.1  
mJ  
W
Maximum Power Dissipationa  
PD  
T
C = 125 °C  
2.4  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
- 55 to + 175  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
LIMIT  
85  
UNIT  
Junction-to-Ambient  
PCB Mountb  
°C/W  
Junction-to-Foot (Drain)  
RthJF  
21  
Notes  
a. Pulse test; pulse width 300 μs, duty cycle 2 %.  
b. When mounted on 1" square PCB (FR-4 material).  
S11-2109 Rev. D, 31-Oct-11  
Document Number: 68669  
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

SQ4840EY-T1_GE3 替代型号

型号 品牌 替代类型 描述 数据表
SQ4840EY-T1-GE3 VISHAY

完全替代

Trans MOSFET N-CH 40V 20.7A 8-Pin SOIC N T/R

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