Datasheet > SPP11N60C3_05

SPP11N60C3_05

更新时间： 2024-01-09 14:03:45

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
15页	662K
描述
Cool MOS⑩ Power Transistor

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中文翻译

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数据手册

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SPP11N60C3_05 数据手册

SPP11N60C3

SPI11N60C3, SPA11N60C3

Cool MOS™ Power Transistor

Feature

@ T

650

0.38

Ω

jmax

DS(on)

• New revolutionary high voltage technology

• Ultra low gate charge

PG-TO220-3-31 PG-TO262-3

PG-TO220

• Periodic avalanche rated

• Extreme dv/dt rated

• High peak current capability

• Improved transconductance

P-TO220-3-31

• PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

Type

Package

Ordering Code

Marking

11N60C3

SPP11N60C3

SPI11N60C3

SPA11N60C3

PG-TO220-3 Q67040-S4395

PG-TO262-3 Q67042-S4403

PG-TO220-3-31

SP000216312

Maximum Ratings

Parameter

Symbol

Value

Unit

SPP_I

SPA

Continuous drain current

T = 25 °C

T = 100 °C

Pulsed drain current, t limited by T

D puls

jmax

Avalanche energy, single pulse

340

I =5.5A, V =50V

Avalanche energy, repetitive t limited by T

0.6

jmax

I =11A, V =50V

Avalanche current, repetitive t limited by T

jmax

Gate source voltage static

tot

Gate source voltage AC (f >1Hz)

Power dissipation, T = 25°C

125

Operating and storage temperature

-55...+150

°C

stg

Reverse diode dv/dt

dv/dt

V/ns

Rev. 2.6

Page 1

2005-09-21

12 3 4 5 6 7...15

中文翻译

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