Datasheet > SPN3458ST6RGB

SPN3458ST6RGB

更新时间： 2024-11-11 06:13:27

品牌	Logo	应用领域
擎力 - SYNC-POWER		/
页数	文件大小	规格书
9页	283K
描述
N-Channel Enhancement Mode MOSFET

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SPN3458ST6RGB 数据手册

SPN3458

N-Channel Enhancement Mode MOSFET

DESCRIPTION

APPLICATIONS

Power Management in Note book

The SPN3458 is the N-Channel logic enhancement mode

power field effect transistors are produced using high cell

density , DMOS trench technology.

This high density process is especially tailored to

minimize on-state resistance.

These devices are particularly suited for low voltage

application such as cellular phone and notebook

computer power management and other battery powered

circuits, and low in-line power loss are needed in a very

small outline surface mount package.

Portable Equipment

Battery Powered System

DC/DC Converter

Load Switch

DSC

LCD Display inverter

FEATURES

PIN CONFIGURATION( TSOP– 6P )

60V/5.0A,RDS(ON)= 115Ω@VGS=10V

60V/4.5A,RDS(ON)= 125Ω@VGS=4.5V

Super high density cell design for extremely low

R^{DS (ON)}

Exceptional on-resistance and maximum DC

current capability

TSOP-6P package design

PART MARKING

2008/12/31 Ver.1

Page 1

12 3 4 5 6 7...9

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