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SPD30N03S2L-20G PDF预览

SPD30N03S2L-20G

更新时间: 2024-09-24 06:13:19
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
9页 656K
描述
OptiMOS Power-Transistor Feature Enhancement mode Logic Level

SPD30N03S2L-20G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.63Is Samacsys:N
其他特性:AVALANCHE RATED, LOGIC LEVEL COMPATIBLE雪崩能效等级(Eas):70 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):30 A
最大漏极电流 (ID):30 A最大漏源导通电阻:0.031 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):60 W
最大脉冲漏极电流 (IDM):120 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

SPD30N03S2L-20G 数据手册

 浏览型号SPD30N03S2L-20G的Datasheet PDF文件第2页浏览型号SPD30N03S2L-20G的Datasheet PDF文件第3页浏览型号SPD30N03S2L-20G的Datasheet PDF文件第4页浏览型号SPD30N03S2L-20G的Datasheet PDF文件第5页浏览型号SPD30N03S2L-20G的Datasheet PDF文件第6页浏览型号SPD30N03S2L-20G的Datasheet PDF文件第7页 
G
SPD30N03S2L-20  
OptiMOS Power-Transistor  
Feature  
Product Summary  
N-Channel  
V
DS  
30  
20  
30  
V
Enhancement mode  
Logic Level  
R
mΩ  
A
DS(on)  
I
D
PG- TO252 -3  
Excellent Gate Charge x R  
product (FOM)  
DS(on)  
Superior thermal resistance  
175°C operating temperature  
Avalanche rated  
dv/dt rated  
Pb-free lead plating; RoHS compliant  
Marking  
Type  
Package  
PG- TO252 -3  
SPD30N03S2L-20G  
2N03L20  
Maximum Ratings, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
1)  
A
Continuous drain current  
I
D
T =25°C  
C
30  
30  
120  
Pulsed drain current  
I
D puls  
T =25°C  
C
70  
mJ  
Avalanche energy, single pulse  
E
AS  
I =30 A , V =25V, R =25Ω  
D
DD  
GS  
2)  
E
6
6
Repetitive avalanche energy, limited by T  
Reverse diode dv/dt  
AR  
jmax  
dv/dt  
kV/µs  
I =30A, V =-V, di/dt=200A/µs, T =175°C  
jmax  
S
DS  
Gate source voltage  
Power dissipation  
V
V
±20  
60  
GS  
P
W
tot  
T =25°C  
C
°C  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
T , T  
-55... +175  
55/175/56  
j
stg  
Page 1  
02-09-2008  

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