SPD15P10PGBT

更新时间： 2024-02-22 22:22:09

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管脉冲局域网
页数	文件大小	规格书
10页	634K
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中文翻译

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SPD15P10PGBT 数据手册

SPP15P10P G

SPD15P10P G

SIPMOS^®Small-Signal-Transistor

Product Summary

Features

V _DS

-100

0.24

-15

Ω

• P-Channel

R _DS(on),max

I _D

• Enhancement mode

• Normal level

• Avalanche rated

PG-TO220-3

PG-TO252-3

• Pb-free lead plating; RoHS compliant

Type

Package

Marking

15P10P

Lead free Packing

SPP15P10P G

SPD15P10P G

PG-TO220-3

PG-TO252-3

Yes

Non dry

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

-15

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

Continuous drain current

-10.6

I _D,pulse

E _AS

-60

Pulsed drain current

230

I _D=-15 A, R _GS=25 Ω

Avalanche energy, single pulse

Gate source voltage

V _GS

±20

P _tot

T _C=25 °C

128

Power dissipation

°C

T _j, T _stg

-55 ... 175

1C (1kV to 2kV)

260 °C

55/175/56

Operating and storage temperature

ESD Class

Soldering temperature

IEC climatic category; DIN IEC 68-1

Rev 1.6

page 1

2009-08-25

12 3 4 5 6 7...10

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