Datasheet > SPD15P10PL G

SPD15P10PL G

更新时间： 2023-09-03 20:36:40

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	757K
描述
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

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SPD15P10PL G 数据手册

SPD15P10PL G

SIPMOS^®Power-Transistor

Product Summary

Features

V _DS

-100

0.20

-15

• P-Channel

R _DS(on),max

I _D

• Enhancement mode

• logic level

• Avalanche rated

PG-TO252-3

• Pb-free lead plating; RoHS compliant



Qualified according to AEC Q101

Type

Package

Marking

Lead free Packing

Yes Non dry

SPD15P10PL G PG-TO252-3

15P10PL

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

-15

11.3

Continuous drain current

I _D,pulse

E _AS

-60

Pulsed drain current

230

I _D=-15 A, R _GS=25 :

Avalanche energy, single pulse

Gate source voltage

V _GS

P _tot

T _C=25 °C

128

Power dissipation

°C

T _j, T _stg

-55 ... 175

1C (1kV to 2kV)

260 °C

55/175/56

Operating and storage temperature

ESD Class

Soldering temperature

IEC climatic category; DIN IEC 68-1

Rev 1.5

page 1

2012-09-03

12 3 4 5 6 7...10

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