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SPD07N60S5 PDF预览

SPD07N60S5

更新时间: 2024-11-23 22:21:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲高压局域网
页数 文件大小 规格书
11页 263K
描述
Cool MOS⑩ Power Transistor

SPD07N60S5 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-252AA
包装说明:GREEN, PLASTIC, TO-252, DPAK-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:5.28
Is Samacsys:N其他特性:AVALANCHE RATED, HIGH VOLTAGE
雪崩能效等级(Eas):230 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):7.3 A最大漏极电流 (ID):7.3 A
最大漏源导通电阻:0.6 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):83 W最大脉冲漏极电流 (IDM):14.6 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SPD07N60S5 数据手册

 浏览型号SPD07N60S5的Datasheet PDF文件第2页浏览型号SPD07N60S5的Datasheet PDF文件第3页浏览型号SPD07N60S5的Datasheet PDF文件第4页浏览型号SPD07N60S5的Datasheet PDF文件第5页浏览型号SPD07N60S5的Datasheet PDF文件第6页浏览型号SPD07N60S5的Datasheet PDF文件第7页 
SPU07N60S5  
SPD07N60S5  
Cool MOS™ Power Transistor  
Feature  
New revolutionary high voltage technology  
V
600  
0.6  
7.3  
V
A
DS  
R
DS(on)  
I
D
Worldwide best R  
in TO-251 and TO-252  
DS(on)  
P-TO252.  
P-TO251.  
Ultra low gate charge  
Periodic avalanche rated  
Extreme dv/dt rated  
2
3
3
1
2
1
Ultra low effective capacitances  
Improved transconductance  
Type  
SPU07N60S5  
SPD07N60S5  
Package  
P-TO251.  
P-TO252.  
Ordering Code  
Q67040-S4196  
Q67040-S4186  
Marking  
07N60S5  
07N60S5  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
A
Continuous drain current  
I
D
T = 25 °C  
7.3  
4.6  
C
T = 100 °C  
C
14.6  
230  
Pulsed drain current, t limited by T  
Avalanche energy, single pulse  
I
E
p
jmax  
D puls  
mJ  
AS  
I = - A, V = 50 V  
D
DD  
1)  
jmax  
E
0.5  
7.3  
Avalanche energy, repetitive t limited by T  
AR  
AR  
I = 7.3 A, V = 50 V  
D
DD  
A
V
Avalanche current, repetitive t limited by T  
I
AR  
jmax AR  
Gate source voltage  
V
±20  
30  
83  
GS  
V
P
Gate source voltage AC (f >1Hz)  
GS  
tot  
Power dissipation, T = 25°C  
W
C
°C  
Operating and storage temperature  
T , T  
-55... +150  
j
stg  
Page 1  
Rev. 2.1  
2004-03-30  

SPD07N60S5 替代型号

型号 品牌 替代类型 描述 数据表
SPD07N60C3 INFINEON

类似代替

Cool MOS™ Power Transistor
IPP60R600C6 INFINEON

功能相似

Metal Oxide Semiconductor Field Effect Transistor
IPB60R600C6 INFINEON

功能相似

Metal Oxide Semiconductor Field Effect Transistor

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