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SPD06N80C3BTMA1 PDF预览

SPD06N80C3BTMA1

更新时间: 2024-11-24 15:52:35
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网高压开关脉冲晶体管
页数 文件大小 规格书
10页 611K
描述
Power Field-Effect Transistor, 6A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, TO-252, DPAK-3

SPD06N80C3BTMA1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-252AA
包装说明:ROHS COMPLIANT, PLASTIC, TO-252, DPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:8.46其他特性:AVALANCHE RATED, HIGH VOLTAGE
雪崩能效等级(Eas):230 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:800 V
最大漏极电流 (ID):6 A最大漏源导通电阻:0.9 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):18 A认证状态:Not Qualified
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SPD06N80C3BTMA1 数据手册

 浏览型号SPD06N80C3BTMA1的Datasheet PDF文件第2页浏览型号SPD06N80C3BTMA1的Datasheet PDF文件第3页浏览型号SPD06N80C3BTMA1的Datasheet PDF文件第4页浏览型号SPD06N80C3BTMA1的Datasheet PDF文件第5页浏览型号SPD06N80C3BTMA1的Datasheet PDF文件第6页浏览型号SPD06N80C3BTMA1的Datasheet PDF文件第7页 
SPD06N80C3  
CoolMOSTM Power Transistor  
Features  
Product Summary  
V DS  
800  
0.9  
31  
V
• New revolutionary high voltage technology  
• Extreme dv/dt rated  
R DS(on)max @ Tj = 25°C  
Q g,typ  
W
nC  
• High peak current capability  
• Qualified according to JEDEC1) for target applications  
• Pb-free lead plating; RoHS compliant; available in Halogen free mold compounda)  
PG-TO252-3  
• Ultra low gate charge  
• Ultra low effective capacitances  
CoolMOSTM 800V designed for:  
• Industrial application with high DC bulk voltage  
• Switching Application ( i.e. active clamp forward )  
Type  
Package  
Marking  
SPD06N80C3  
PG-TO252-3  
06N80C3  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T A=25 °C  
6
3.8  
Continuous drain current  
A
T A=100 °C  
Pulsed drain current2)  
18  
I D,pulse  
E AS  
T A=25 °C  
I D=1.2 A, V DD=50 V  
I D=6 A, V DD=50 V  
Avalanche energy, single pulse  
230  
0.2  
mJ  
2),3)  
2),3)  
E AR  
Avalanche energy, repetitive t AR  
I AR  
6
A
Avalanche current, repetitive t AR  
MOSFET dv /dt ruggedness  
Gate source voltage  
V DS=0…640 V  
static  
50  
dv /dt  
V GS  
V/ns  
V
±20  
±30  
83  
AC (f >1 Hz)  
T A=25 °C  
P tot  
Power dissipation  
W
T j, T stg  
-55 ... 150  
Operating and storage temperature  
°C  
a) non-Halogen free (OPN: SPD06N80C3BT); Halogen free (OPN: SPD06N80C3AT)  
Rev. 2.92
page 1  
2013-07-31  

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