Datasheet > SODDB3RFG

SODDB3RFG

更新时间： 2024-02-06 14:19:35

品牌	Logo	应用领域
TSC		数据判读及分析中心
页数	文件大小	规格书
4页	234K
描述
400mW Trigger Diode (DIAC)

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中文翻译

获取价格

数据手册

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SODDB3RFG 数据手册

SODDB3/SODDB3T

Taiwan Semiconductor

Small Signal Product

400mW Trigger Diode (DIAC)

FEATURES

- Surface Mount Device SOD-123 packaged

- V_BO=32V DB3

- Max. P_D=400mW

MECHANICAL DATA

- Case: Plastic gull wing SOD-123 package

- High temperature soldering guaranteed: 260°C/10s

- Weight: 10.55mg (approximately)

- Moisture sensitivity level 1

SOD-123

- Pb free and RoHS compliant

APPLICATION

- These diacs are intended for use in thyrisitors phase control, circuits

for lamp dimming, universal motor speed control, and heat control

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

PARAMETER

SYMBOL

VALUE

UNIT

Repetitive Peak on-state Current

tp=20μs, f=100Hz

I_TRM

P_D

Power Dissipation

400

^oC

Junction Temperature

Storage Temperature Range

T_J

- 40 to +125

T_STG

PARAMETER

TEST CONDITION

SYMBOL MIN TYP MAX

UNIT

SODDB3

SODDB3T

SODDB3

SODDB3T

SODDB3

SODDB3T

±3

±2

V_BO

Reverse Breakdown Voltage

Breakdown Voltage Symmetry

Dynamic Breakdown Voltage

C=22nF

[|+V_BO1|-

|-V_BO2|]

C=22nF

△I=[ I_BOto I_F=10mA]

|△V±|

t_P=20μs, f=100Hz

Note

I_TRM

V_O

I_R

Repetitive Peak on-state Current

Output Voltage

V_B= 0.5V_BO

Leakage Current

μA

μs

Rest Time

t_r

1.5

SODDB3

100

I_BO

Breakdown current

C=22nF

μA

SODDB3T

Note: Test circuit for output voltage

Document Number: DS_S1406002

Version: B15

12 3 4

中文翻译

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