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SODDB3T

更新时间: 2024-09-24 01:16:39
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4页 234K
描述
400mW Trigger Diode (DIAC)

SODDB3T 数据手册

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SODDB3/SODDB3T  
Taiwan Semiconductor  
Small Signal Product  
400mW Trigger Diode (DIAC)  
FEATURES  
- Surface Mount Device SOD-123 packaged  
- VBO=32V DB3  
- Max. PD=400mW  
MECHANICAL DATA  
- Case: Plastic gull wing SOD-123 package  
- High temperature soldering guaranteed: 260°C/10s  
- Weight: 10.55mg (approximately)  
- Moisture sensitivity level 1  
SOD-123  
- Pb free and RoHS compliant  
APPLICATION  
- These diacs are intended for use in thyrisitors phase control, circuits  
for lamp dimming, universal motor speed control, and heat control  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
UNIT  
Repetitive Peak on-state Current  
tp=20μs, f=100Hz  
ITRM  
PD  
2
A
Power Dissipation  
400  
mW  
oC  
oC  
Junction Temperature  
Storage Temperature Range  
TJ  
- 40 to +125  
- 40 to +125  
TSTG  
PARAMETER  
TEST CONDITION  
SYMBOL MIN TYP MAX  
UNIT  
SODDB3  
SODDB3T  
SODDB3  
SODDB3T  
SODDB3  
SODDB3T  
28  
32  
36  
34  
±3  
±2  
VBO  
Reverse Breakdown Voltage  
Breakdown Voltage Symmetry  
Dynamic Breakdown Voltage  
C=22nF  
V
30  
32  
[|+VBO1 |-  
|-VBO2 |]  
C=22nF  
V
V
5
9
2
5
-
I=[ IBO to IF=10mA]  
|V±|  
tP=20μs, f=100Hz  
Note  
ITRM  
VO  
IR  
Repetitive Peak on-state Current  
Output Voltage  
A
V
VB = 0.5VBO  
Leakage Current  
10  
μA  
μs  
Rest Time  
tr  
1.5  
SODDB3  
100  
15  
IBO  
Breakdown current  
C=22nF  
μA  
SODDB3T  
-
Note: Test circuit for output voltage  
Document Number: DS_S1406002  
Version: B15  

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