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SNA-100S PDF预览

SNA-100S

更新时间: 2024-11-29 03:31:31
品牌 Logo 应用领域
SIRENZA 放大器
页数 文件大小 规格书
3页 169K
描述
DC-10 GHz, Cascadable GaAs HBT MMIC Amplifier

SNA-100S 数据手册

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SNA-100S  
Product Description  
DC-10 GHz, Cascadable  
Sirenza Microdevices’ SNA-100S is a GaAs monolithic  
broadband amplifier (MMIC) in die form. This amplifier  
provides 12.2dB of gain at 1950 MHz and 10.3dB at  
10,000 MHz.  
GaAs HBT MMIC Amplifier  
These unconditionally stable amplifiers are designed for use  
as general purpose 50 ohm gain blocks. Its small size  
(0.350mm x 0.345mm) and gold metallization make it an  
ideal choice for use in hybrid circuits. The SNA-100S is  
100% DC tested and sample tested for RF performance.  
Product Features  
Cascadable 50 Ohm Gain Block  
12.2dB Gain, +11dBm P1dB  
1.5:1 Input and Output VSWR  
Operates From Single Supply  
Through wafer via for ground  
External DC decoupling capacitors determine low frequency  
response. The use of an external resistor allows for bias  
flexibility and stability.  
The SNA-100S is supplied in gel paks of 100 devices.  
Also available in packaged form (SNA-176 & SNA-186)  
Output Power vs. Frequency  
13  
Applications  
12  
dBm  
Broadband DriverAmplifier for Fiber & CATV  
11  
transmitters  
10  
9
IF Amplifier or gain stage for VSAT, LMDS,  
WLAN, and Cellular Systems  
8
0.5  
1
1.5  
2
6
8
10  
GHz 4  
Symbol  
Parameter  
Units Frequency Min.  
Typ.  
Max.  
dB  
dB  
dB  
dB  
dB  
850 MHz  
1950 MHz  
2400 MHz  
6000 MHz  
10000 MHz  
12.5  
12.2  
12.0  
12.5  
10.3  
10.7  
13.7  
Gp  
Small Signal Power Gain [2]  
8.8  
11.8  
GF  
Gain Ripple  
dB  
0.1-8 GHz  
+/- 0.5  
BW3dB 3dB Bandwidth  
GHz  
dBm  
dBm  
dBm  
dBm  
dB  
10.5  
11.0  
11.5  
24.0  
24.0  
5
1950 MHz  
10000 MHz  
1950 MHz  
10000 MHz  
1950 MHz  
1950 MHz  
0.1-10 GHz  
9
P1dB  
Output Power at 1dB Compression [2]  
9.5  
21  
21  
OIP3  
Output Third Order Intercept Point [2]  
NF  
RL  
Noise Figure  
Input / Output Return Loss  
dB  
dB  
13  
16  
ISOL Reverse Isolation  
VD  
ID  
Device Operating Voltage [1]  
Device Operating Current [1]  
V
mA  
dB/°C  
°C/W  
3.1  
35  
3.6  
4.1  
45  
40  
-0.0015  
280  
dG/dT Device Gain Temperature Coefficient  
TH, j-b Thermal Resistance (junction to backside)  
VS = 8 V ID = 40 mA Typ.  
RBIAS = 110 Ohms TL = 25ºC, ZS = ZL = 50 Ohms, [1] 100% DC Tested, [2] Sample Tested  
R
OIP3 Tone Spacing = 1.2 MHz, Pout per tone = 0 dBm  
Test Conditions:  
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of  
this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are  
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..  
All worldwide rights reserved.  
303 South Technology Court  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
1
http://www.sirenza.com  
EDS-103299 Rev B  

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