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SNA-276-TR1

更新时间： 2024-11-28 22:21:35
品牌 Logo 应用领域
STANFORD 放大器射频微波
页数 文件大小 规格书
3页 84K
描述
DC-6.5 GHz, Cascadable GaAs MMIC Amplifier

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SNA-276-TR1 数据手册

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Product Description  
SNA-276  
Stanford Microdevices’ SNA-276 is a GaAs monolithic  
broadband amplifier (MMIC) housed in a low-cost surface  
mountable stripline package. This amplifier provides 16dB of  
gain when biased at 50mA and 4V.  
DC-6.5 GHz, Cascadable  
GaAs MMIC Amplifier  
External DC decoupling capacitors determine low frequency  
response. The use of an external resistor allows for bias  
flexibility and stability.  
These unconditionally stable amplifiers are designed for use  
as general purpose 50 ohm gain blocks. Also available in  
chip form (SNA-200), its small size (0.33mm x 0.33mm) and  
gold metallization, make it an ideal choice for use in hybrid  
circuits.  
Product Features  
• Cascadable 50 Ohm Gain Block  
• 16dB Gain, +14dBm P1dB  
The SNA-276 is available in tape and reel at 1000, 3000 and  
5000 devices per reel.  
• 1.5:1 Input and Output VSWR  
•Operates From Single Supply  
• Low Cost Stripline Mount Ceramic Package  
• Hermetically Sealed  
Output Power vs. Frequency  
16  
15  
14  
dBm  
Applications  
• Narrow and Broadband Linear Amplifiers  
• Commercial and Industrial Applications  
13  
12  
0.5  
1
1.5  
2
4
6
8
10  
GHz  
Electrical Specifications at Ta = 25° C  
P a r a m e te r s : T e s t C o n d it io n s :  
S y m b o l  
U n it s  
M in .  
T y p .  
M a x .  
Id  
= 5 0 m A , Z 0 = 5 0 O h m s  
f
f
f
=
=
=
0 .1 - 2 .0 G H z  
2 .0 - 4 .0 G H z  
4 .0 - 6 .5 G H z  
d B  
d B  
d B  
1 5 .0  
1 4 .0  
1 3 .0  
1 6 .0  
1 5 .0  
1 4 .0  
G
G
S m a ll S ig n a l P o w e r G a in  
P
F
G a in F la tn e s s  
3 d B B a n d w id th  
f
=
0 .1 - 4 .0 G H z  
d B  
G H z  
d B m  
d B  
+ /1 .0  
6 .5  
B W 3 d B  
P 1 d B  
O u tp u t P o w e r a t 1 d B C o m p re s s io n  
N o is e F ig u r e  
f
f
f
=
=
=
2 .0 G H z  
1 4 .0  
5 .5  
N F  
2 .0 G H z  
6 .0  
V S W R  
In p u t/O u tp u t  
0 .1 - 6 .5 G H z  
1 .5 :1  
-
IP 3  
T h ir d O rd e r In te r c e p t P o in t  
G ro u p D e la y  
f
f
=
=
2 .0 G H z  
2 .0 G H z  
d B m  
p s e c  
2 7 .0  
1 0 0  
T D  
IS O L  
V D  
R e v e r s e Is o la tio n  
D e v ic e V o lta g e  
f
=
0 .1 - 6 .5 G H z  
d B  
V
2 0  
4 .0  
3 .5  
4 .5  
d G /d T  
d V /d T  
D e v ic e  
G
Te m p e r a tu r e C o e ffic ie n t  
- 0 .0 0 1 8  
- 4 .0  
a in  
/d e g C  
d B  
D e v ic e V o lta g e Te m p e ra tu r e  
C o e ffic ie n t  
m V /d e g C  
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.  
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change  
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford  
Microdevices product for use in life-support devices and/or systems.  
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.  
522 Almanor Ave., Sunnyvale, CA 94086  
Phone: (800) SMI-MMIC  
http://www.stanfordmicro.com  
5-25  
123

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