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SN74CBTD1G125DCKR PDF预览

SN74CBTD1G125DCKR

更新时间: 2024-12-02 01:12:19
品牌 Logo 应用领域
德州仪器 - TI 驱动光电二极管逻辑集成电路
页数 文件大小 规格书
14页 606K
描述
SINGLE FET BUS SWITCH WITH LEVEL SHIFTING

SN74CBTD1G125DCKR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:TSSOP, TSSOP5/6,.08针数:5
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:1 week
风险等级:0.93其他特性:BUS SWITCH
控制类型:ENABLE LOW计数方向:BIDIRECTIONAL
系列:CBT/FST/QS/5C/BJESD-30 代码:R-PDSO-G5
JESD-609代码:e4长度:2 mm
负载电容(CL):50 pF逻辑集成电路类型:BUS DRIVER
湿度敏感等级:1位数:1
功能数量:1端口数量:2
端子数量:5最高工作温度:85 °C
最低工作温度:-40 °C输出特性:3-STATE
输出极性:TRUE封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP5/6,.08
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
包装方法:TR峰值回流温度(摄氏度):260
电源:5 V最大电源电流(ICC):1.5 mA
Prop。Delay @ Nom-Sup:0.25 ns传播延迟(tpd):0.25 ns
认证状态:Not Qualified座面最大高度:1.1 mm
子类别:Bus Driver/Transceivers最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
翻译:N/A宽度:1.25 mm
Base Number Matches:1

SN74CBTD1G125DCKR 数据手册

 浏览型号SN74CBTD1G125DCKR的Datasheet PDF文件第2页浏览型号SN74CBTD1G125DCKR的Datasheet PDF文件第3页浏览型号SN74CBTD1G125DCKR的Datasheet PDF文件第4页浏览型号SN74CBTD1G125DCKR的Datasheet PDF文件第5页浏览型号SN74CBTD1G125DCKR的Datasheet PDF文件第6页浏览型号SN74CBTD1G125DCKR的Datasheet PDF文件第7页 
SN74CBTD1G125  
SINGLE FET BUS SWITCH  
WITH LEVEL SHIFTING  
www.ti.com  
SCDS063LJULY 1998REVISED JUNE 2006  
FEATURES  
5-Switch Connection Between Two Ports  
ESD Protection Exceeds JESD 22  
TTL-Compatible Control Input Levels  
– 2000-V Human-Body Model (A114-A)  
– 200-V Machine Model (A115-A)  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
DBV PACKAGE  
(TOP VIEW)  
DCK PACKAGE  
(TOP VIEW)  
VCC  
OE  
A
1
2
3
5
1
2
3
5
4
OE  
A
VCC  
4
GND  
B
B
GND  
See mechanical drawings for dimensions.  
DESCRIPTION/ORDERING INFORMATION  
The SN74CBTD1G125 features a single high-speed line switch. The switch is disabled when the output-enable  
(OE) input is high. A diode to VCC is integrated on the chip to allow for level shifting from 5-V signals at the  
device inputs to 3.3-V signals at the device outputs.  
ORDERING INFORMATION  
TA  
PACKAGE(1)  
ORDERABLE PART NUMBER  
SN74CBTD1G125DBVR  
SN74CBTD1G125DBVT  
SN74CBTD1G125DCKR  
SN74CBTD1G125DCKT  
TOP-SIDE MARKING(2)  
P25_  
Reel of 3000  
SOT (SOT-23) – DBV  
SOT (SC-70) – DCK  
Reel of 250  
Reel of 3000  
Reel of 250  
–40°C to 85°C  
PM_  
(1) Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at  
www.ti.com/sc/package.  
(2) The actual top-side marking has one additional character that designates the assembly/test site.  
FUNCTION TABLE  
INPUT  
FUNCTION  
OE  
L
A port = B port  
Disconnect  
H
LOGIC DIAGRAM (POSITIVE LOGIC)  
2
4
B
A
1
OE  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 1998–2006, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  

SN74CBTD1G125DCKR 替代型号

型号 品牌 替代类型 描述 数据表
SN74CBTD1G125DCKT TI

完全替代

SINGLE FET BUS SWITCH WITH LEVEL SHIFTING
74CBTD1G125DCKTE4 TI

完全替代

SINGLE FET BUS SWITCH WITH LEVEL SHIFTING
74CBTD1G125DCKRG4 TI

完全替代

SINGLE FET BUS SWITCH WITH LEVEL SHIFTING

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CBT/FST/QS/5C/B SERIES, DUAL 1-BIT DRIVER, TRUE OUTPUT, PDSO8, GREEN, PLASTIC, MS-0012AA,