是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SOIC |
包装说明: | SOIC-8 | 针数: | 8 |
Reach Compliance Code: | compliant | HTS代码: | 8542.39.00.01 |
Factory Lead Time: | 1 week | 风险等级: | 5.48 |
Is Samacsys: | N | 控制类型: | ENABLE HIGH |
计数方向: | BIDIRECTIONAL | 系列: | CBT/FST/QS/5C/B |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e4 |
长度: | 4.9 mm | 逻辑集成电路类型: | BUS DRIVER |
湿度敏感等级: | 1 | 位数: | 1 |
功能数量: | 2 | 端口数量: | 2 |
端子数量: | 8 | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 输出特性: | 3-STATE |
输出极性: | TRUE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | SOP | 封装等效代码: | SOP8,.25 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
包装方法: | TUBE | 峰值回流温度(摄氏度): | 260 |
电源: | 5 V | 最大电源电流(ICC): | 1.5 mA |
Prop。Delay @ Nom-Sup: | 0.15 ns | 传播延迟(tpd): | 0.15 ns |
认证状态: | Not Qualified | 座面最大高度: | 1.75 mm |
子类别: | Bus Driver/Transceivers | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) |
端子形式: | GULL WING | 端子节距: | 1.27 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
翻译: | N/A | 宽度: | 3.91 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
SN74CBTD3305CDR | TI |
类似代替 |
DUAL FET BUS SWITCH WITH LEVEL SHIFTING 5-V BUS SWITCH WITH - 2-V UNDERSHOOT PROTECTION |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SN74CBTD3305CDR | TI |
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DUAL FET BUS SWITCH WITH LEVEL SHIFTING 5-V BUS SWITCH WITH - 2-V UNDERSHOOT PROTECTION | |
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CBT/FST/QS/5C/B SERIES, DUAL 1-BIT DRIVER, TRUE OUTPUT, PDSO8, GREEN, PLASTIC, MS-0012AA, | |
SN74CBTD3305CDRG4 | TI |
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CBT/FST/QS/5C/B SERIES, DUAL 1-BIT DRIVER, TRUE OUTPUT, PDSO8, GREEN, PLASTIC, MS-0012AA, | |
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DUAL FET BUS SWITCH WITH LEVEL SHIFTING 5-V BUS SWITCH WITH - 2-V UNDERSHOOT PROTECTION | |
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SN74CBTD3305CPWR | TI |
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DUAL FET BUS SWITCH WITH LEVEL SHIFTING 5-V BUS SWITCH WITH - 2-V UNDERSHOOT PROTECTION | |
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DUAL FET BUS SWITCH WITH LEVEL SHIFTING 5-V BUS SWITCH WITH-2-V UNDERSHOOT PROTECTION | |
SN74CBTD3306CD | TI |
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DUAL FET BUS SWITCH WITH LEVEL SHIFTING 5-V BUS SWITCH WITH-2-V UNDERSHOOT PROTECTION |