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SN74ACT7814-40DLR PDF预览

SN74ACT7814-40DLR

更新时间： 2024-11-16 12:05:19
品牌 Logo 应用领域
德州仪器 - TI 存储内存集成电路光电二极管先进先出芯片时钟
页数 文件大小 规格书
16页 525K
描述
64 x 18 STROBED FIRST-IN, FIRST-OUT MEMORY

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SN74ACT7814-40DLR 技术参数

是否无铅： 含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：SSOP
包装说明：0.300 INCH, 0.635 MM PITCH, GREEN, PLASTIC, SSOP-56针数：56
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.32.00.71Factory Lead Time：1 week
风险等级：7.81Is Samacsys：N
最长访问时间：20 ns最大时钟频率 (fCLK)：25 MHz
周期时间：40 nsJESD-30 代码：R-PDSO-G56
JESD-609代码：e4长度：18.415 mm
内存密度：1152 bit内存集成电路类型：OTHER FIFO
内存宽度：18湿度敏感等级：1
功能数量：1端子数量：56
字数：64 words字数代码：64
工作模式：SYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：64X18
输出特性：3-STATE可输出：YES
封装主体材料：PLASTIC/EPOXY封装代码：SSOP
封装等效代码：SSOP56,.4封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, SHRINK PITCH并行/串行：PARALLEL
峰值回流温度（摄氏度）：260电源：5 V
认证状态：Not Qualified座面最大高度：2.79 mm
子类别：FIFOs最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：GULL WING端子节距：0.635 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：7.5 mmBase Number Matches：1

SN74ACT7814-40DLR 数据手册

 浏览型号SN74ACT7814-40DLR的Datasheet PDF文件第2页浏览型号SN74ACT7814-40DLR的Datasheet PDF文件第3页浏览型号SN74ACT7814-40DLR的Datasheet PDF文件第4页浏览型号SN74ACT7814-40DLR的Datasheet PDF文件第5页浏览型号SN74ACT7814-40DLR的Datasheet PDF文件第6页浏览型号SN74ACT7814-40DLR的Datasheet PDF文件第7页 
SN74ACT7814  
64 × 18 STROBED FIRST-IN, FIRST-OUT MEMORY  
SCAS209C – APRIL 1992 – REVISED APRIL 1998  
DL PACKAGE  
(TOP VIEW)  
Member of the Texas Instruments  
Widebus Family  
Load Clock and Unload Clock Can Be  
Asynchronous or Coincident  
RESET  
D17  
D16  
D15  
D14  
D13  
D12  
D11  
OE  
1
56  
55  
54  
53  
52  
51  
50  
49  
48  
47  
46  
45  
44  
43  
Q17  
Q16  
Q15  
GND  
Q14  
2
64 Words by 18 Bits  
3
Low-Power Advanced CMOS Technology  
Full, Empty, and Half-Full Flags  
4
5
6
Programmable Almost-Full/Almost-Empty  
Flag  
V
7
CC  
Q13  
Q12  
Q11  
Q10  
Q9  
8
Fast Access Times of 15 ns With a 50-pF  
Load and All Data Outputs Switching  
Simultaneously  
D10  
9
V
10  
11  
12  
13  
14  
CC  
D9  
D8  
GND  
D7  
Data Rates up to 50 MHz  
3-State Outputs  
GND  
Q8  
Pin-to-Pin Compatible With SN74ACT7804  
and SN74ACT7806  
D6 15  
42 Q7  
D5  
D4  
Q6  
Q5  
16  
17  
41  
40  
39  
Packaged in Shrink Small-Outline 300-mil  
Package Using 25-mil Center-to-Center  
Spacing  
D3 18  
D2 19  
V
CC  
38 Q4  
37 Q3  
D1 20  
description  
36 Q2  
D0 21  
A FIFO memory is a storage device that allows  
data to be written into and read from its array at  
independent data rates. The SN74ACT7814 is a  
64-word by 18-bit FIFO for high speed and fast  
access times. It processes data at rates up to  
50 MHz and access times of 15 ns in a bit-parallel  
format.  
35 GND  
34 Q1  
HF 22  
PEN 23  
AF/AE 24  
LDCK 25  
NC 26  
33 Q0  
32 UNCK  
31 NC  
NC 27  
30 NC  
FULL 28  
29 EMPTY  
Data is written into memory on a low-to-high  
transition at the load clock (LDCK) input and is  
read out on a low-to-high transition at the unload  
clock (UNCK) input. The memory is full when the  
number of words clocked in exceeds the number  
of words clocked out by 64. When the memory is  
full, LDCK signals have no effect on the data  
residing in memory. When the memory is empty,  
UNCK signals have no effect.  
Status of the FIFO memory is monitored by the full (FULL), empty (EMPTY), half-full (HF), and  
almost-full/almost-empty (AF/AE) flags. The FULL output is low when the memory is full and high when the  
memory is not full. The EMPTY output is low when the memory is empty and high when it is not empty. The HF  
output is high when the FIFO contains 32 or more words and is low when it contains 31 or fewer words. The  
AF/AE status flag is a programmable flag. The first one or two low-to-high transitions of LDCK after reset are  
used to program the almost-empty offset value (X) and the almost-full offset value (Y) if program enable (PEN)  
is low. The AF/AE flag is high when the FIFO contains X or fewer words or (64 – Y) or more words. The AF/AE  
flag is low when the FIFO contains between (X + 1) and (63 – Y) words.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Widebus is a trademark of Texas Instruments Incorporated.  
Copyright 1998, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...16

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SN74ACT7814-40DLR 替代型号

型号 品牌 替代类型 描述 数据表
SN74ACT7814-40DL TI

完全替代

 64 x 18 STROBED FIRST-IN, FIRST-OUT MEMORY
SN74ACT7813-20DL TI

类似代替

 64 x18 CLOCKED FIRST-IN, FIRST-OUT MEMORY
SN74ACT7813-15DL TI

类似代替

 64 x18 CLOCKED FIRST-IN, FIRST-OUT MEMORY

与SN74ACT7814-40DLR相关器件

型号 品牌 获取价格 描述 数据表
SN74ACT7814DL TI

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 		64 】 18 STROBED FIRST-IN, FIRST-OUT MEMORY
SN74ACT7881 TI

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 		1024 】 18 CLOCKED FIRST-IN, FIRST-OUT MEMORY
SN74ACT7881-15FN TI

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 		1024 x 18 synchronous FIFO memory 68-PLCC 0 to 70
SN74ACT7881-15FNR TI

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 		1KX18 OTHER FIFO, 12ns, PQCC68, GREEN, PLASTIC, LCC-68
SN74ACT7881-15PNR TI

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 		1KX18 OTHER FIFO, 12ns, PQFP80, GREEN, PLASTIC, LQFP-80
SN74ACT7881-20FN TI

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 		1024 x 18 synchronous FIFO memory 68-PLCC 0 to 70
SN74ACT7881-30FN TI

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 		1KX18 OTHER FIFO, 18ns, PQCC68, GREEN, PLASTIC, LCC-68
SN74ACT7881-30PN TI

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 		1024 x 18 synchronous FIFO memory 80-LQFP 0 to 70
SN74ACT7881-30PNR TI

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 		1KX18 OTHER FIFO, 18ns, PQFP80, GREEN, PLASTIC, LQFP-80
SN74ACT7881FN TI

获取价格

 		1024 】 18 CLOCKED FIRST-IN, FIRST-OUT MEMORY

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