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SN74ACT72221L50RJ PDF预览

SN74ACT72221L50RJ

更新时间： 2024-11-16 00:48:15
品牌 Logo 应用领域
德州仪器 - TI 时钟先进先出芯片内存集成电路
页数 文件大小 规格书
21页 305K
描述
SYNCHRONOUS FIRST-IN FIRST-OUT MEMORIES

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中文翻译

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SN74ACT72221L50RJ 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：QFJ
包装说明：QCCJ, LDCC32,.5X.6针数：32
Reach Compliance Code：unknownFactory Lead Time：1 week
风险等级：5.87最长访问时间：25 ns
最大时钟频率 (fCLK)：20 MHz周期时间：50 ns
JESD-30 代码：R-PQCC-J32JESD-609代码：e0
内存密度：9216 bit内存集成电路类型：OTHER FIFO
内存宽度：9功能数量：1
端子数量：32字数：1024 words
字数代码：1000工作模式：SYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：1KX9可输出：YES
封装主体材料：PLASTIC/EPOXY封装代码：QCCJ
封装等效代码：LDCC32,.5X.6封装形状：RECTANGULAR
封装形式：CHIP CARRIER并行/串行：PARALLEL
峰值回流温度（摄氏度）：NOT SPECIFIED电源：5 V
认证状态：Not Qualified子类别：FIFOs
最大压摆率：0.16 mA最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：TIN LEAD
端子形式：J BEND端子节距：1.27 mm
端子位置：QUAD处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

SN74ACT72221L50RJ 数据手册

 浏览型号SN74ACT72221L50RJ的Datasheet PDF文件第2页浏览型号SN74ACT72221L50RJ的Datasheet PDF文件第3页浏览型号SN74ACT72221L50RJ的Datasheet PDF文件第4页浏览型号SN74ACT72221L50RJ的Datasheet PDF文件第5页浏览型号SN74ACT72221L50RJ的Datasheet PDF文件第6页浏览型号SN74ACT72221L50RJ的Datasheet PDF文件第7页 
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SCAS222 − FEBRUARY 1993 − REVISED JUNE 1993  
RJ PACKAGE  
(TOP VIEW)  
D Read and Write Clocks Can Be  
Asynchronous or Coincident  
D Organization:  
− SN74ACT72211L − 512 × 9  
− SN74ACT72221L − 1024 × 9  
− SN74ACT72231L − 2048 × 9  
− SN74ACT72241L − 4096 × 9  
4
3
2
1
32 31 30  
29  
5
D1  
D0  
PAF  
PAE  
RS  
6
7
8
9
28  
27  
26  
25  
WEN1  
WCLK  
WEN2/LD  
D Write and Read Cycle Times of 15 ns  
D Bit-Width Expandable  
GND  
V
CC  
REN1 10  
24 Q8  
D Empty and Full Flags  
RCLK  
REN2  
OE  
Q7  
Q6  
Q5  
11  
12  
13  
23  
22  
21  
D Programmable Almost-Empty and  
Almost-Full Flags With Default Offsets  
of Empty+7 and Full−7, Respectively  
14 15 16 17 18 19 20  
D TTL-Compatible Inputs  
D Fully Compatible With the  
IDT72211/72221/72231/72241  
D Available in 32-Pin Plastic J-Leaded  
Chip Carrier (RJ)  
description  
The SN74ACT72211L, SN74ACT72221L, SN74ACT72231L, and SN74ACT72241L are constructed with  
CMOS dual-port SRAM and are arranged as 512, 1024, 2048, and 4096 9-bit words, respectively. Internal write  
and read address counters provide data throughput on a first-in, first-out (FIFO) basis. Full and empty flags  
prevent memory overflow and underflow, and two programmable flags (almost full and almost empty) are  
provided.  
The SN74ACT72211L, SN74ACT72221L, SN74ACT72231L, and SN74ACT72241L are synchronous FIFOs,  
which means the data input port and data output port each employ synchronous control. Write-enable (WEN1,  
WEN2/LD) signals allow the low-to-high transition of the write clock (WCLK) to store data in memory, and  
read-enable (REN1, REN2) signals allow the low-to-high transition of the read clock (RCLK) to read data from  
memory. WCLK and RCLK are independent of one another and can operate asynchronously or be tied together  
for single-clock operation.  
The empty-flag (EF) output is synchronized to RCLK and the full-flag (FF) output is synchronized to WCLK to  
indicate absolute boundary conditions. Write operations are prohibited when FF is low, and read operations are  
prohibited when EF is low. Two programmable flags, programmable almost empty (PAE) and programmable  
almost full (PAF), can both be programmed to indicate any measure of memory fill. After reset, PAE defaults  
to empty+7 and PAF defaults to full−7. Flag-offset programming control is similar to a memory write with the  
use of the load (WEN2/LD) signal.  
These devices are suited for providing a data channel between two buses operating at asynchronous or  
synchronous rates. Applications include use as rate buffers for graphics systems and high-speed queues for  
communication systems. A 9-bit-wide data path is provided for the transmission of byte data plus a parity bit  
or packet-framing information.  
The SN74ACT72211L, SN74ACT72221L, SN74ACT72231L, and SN74ACT72241L are characterized for  
operation from 0°C to 70°C.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
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Copyright 1993, Texas Instruments Incorporated  
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ꢤ ꢨ ꢥ ꢤꢝ ꢞꢲ ꢠꢟ ꢣ ꢫꢫ ꢩꢣ ꢡ ꢣ ꢢ ꢨ ꢤ ꢨ ꢡ ꢥ ꢭ  
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1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443  
1234567...21

中文翻译

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与SN74ACT72221L50RJ相关器件

型号 品牌 获取价格 描述 数据表
SN74ACT72221L-50RJ TI

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 		1KX9 OTHER FIFO, 25ns, PQCC32, PLASTIC, LCC-32
SN74ACT72231L TI

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 		SYNCHRONOUS FIRST-IN, FIRST-OUT MEMORIES
SN74ACT72231L15RJ TI

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 		SYNCHRONOUS FIRST-IN FIRST-OUT MEMORIES
SN74ACT72231L20RJ TI

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 		SYNCHRONOUS FIRST-IN FIRST-OUT MEMORIES
SN74ACT72231L20RJR TI

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 		SYNCHRONOUS FIRST-IN FIRST-OUT MEMORIES
SN74ACT72231L-20RJR TI

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 		2KX9 OTHER FIFO, 12ns, PQCC32, PLASTIC, LCC-32
SN74ACT72231L25RJ TI

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 		SYNCHRONOUS FIRST-IN FIRST-OUT MEMORIES
SN74ACT72231L-25RJR TI

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 		2KX9 OTHER FIFO, 15ns, PQCC32, PLASTIC, LCC-32
SN74ACT72231L35RJ TI

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 		SYNCHRONOUS FIRST-IN FIRST-OUT MEMORIES
SN74ACT72231L50RJ TI

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 		2KX9 OTHER FIFO, 25ns, PQCC32, PLASTIC, LCC-32

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