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SN65LBC176A-EP

更新时间： 2025-08-31 12:14:59

品牌	Logo	应用领域
德州仪器 - TI		总线收发器
页数	文件大小	规格书
17页	410K
描述
DIFFERENTIAL BUS TRANSCEIVER

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中文翻译

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SN65LBC176A-EP 数据手册

ꢁꢂꢃ ꢄ ꢅ ꢆꢇ ꢈꢉ ꢃꢊ ꢋꢌ ꢍ

ꢎꢏ ꢐꢐ ꢌꢑ ꢌꢂꢒ ꢏꢊ ꢅ ꢆꢓꢁ ꢒ ꢑꢊꢂꢁ ꢇꢌ ꢏ ꢔꢌ ꢑ

ꢀ

SGLS151C − DECEMBER 2002 − REVISED JULY 2004

D Package

(TOP VIEW)

Controlled Baseline

− One Assembly/Test Site, One Fabrication

Site

Extended Temperature Performance of

−40°C to 125°C and −55°C to 125°C

Enhanced Diminishing Manufacturing

Sources (DMS) Support

GND

Enhanced Product Change Notification

logic diagram (positive logic)

†

Qualification Pedigree

High-Speed Low-Power LinBiCMOS

‡

Circuitry Designed for Signaling Rates Up

to 30 Mbps

Bus-Pin ESD Protection Exceeds 12-kV

HBM

Bus

Compatible With ANSI Standard

TIA/EIA-485-A and ISO 8482:1987(E)

Low Skew

Function Tables

Designed for Multipoint Transmission on

Long Bus Lines in Noisy Environments

DRIVER

INPUT

ENABLE

OUTPUTS

Low Disabled Supply Current

Requirements . . . 700 µA Maximum

Common-Mode Voltage Range of −7 V

to 12 V

Open

Thermal-Shutdown Protection

Driver Positive and Negative Current

Limiting

RECEIVER

DIFFERENTIAL INPUTS

ENABLE

OUTPUT

Open-Circuit Fail-Safe Receiver Design

Receiver Input Sensitivity . . . 200 mV Max

Receiver Input Hysteresis . . . 50 mV Typ

−V

≥ 0.2 V

≤ −0.2 V

−0.2 V < V < 0.2 V

Glitch-Free Power-Up and Power-Down

Protection

Open

†

‡

H = high level, L = low level, ? = indeterminate,

X = irrelevant, Z = high impedance (off)

Component qualification in accordance with JEDEC and industry

standards to ensure reliable operation over an extended

temperature range. This includes, but is not limited to, Highly

Accelerated Stress Test (HAST) or biased 85/85, temperature

cycle, autoclave or unbiased HAST, electromigration, bond

intermetallic life, and mold compound life. Such qualification

testing should not be viewed as justifying use of this component

beyond specified performance and environmental limits.

Signaling rate by TIA/EIA-485-A definition restrict transition times

to 30% of the bit length, and much higher signaling rates may be

achieved without this requirement as displayed in the TYPICAL

CHARACTERISTICS of this device.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

LinBiCMOS and LinASIC are trademarks of Texas Instruments.

ꢍꢑ ꢕ ꢎꢓ ꢇ ꢒꢏ ꢕ ꢂ ꢎ ꢊꢒꢊ ꢖꢗ ꢘ ꢙꢚ ꢛ ꢜꢝ ꢖꢙꢗ ꢖꢞ ꢟꢠ ꢚ ꢚ ꢡꢗꢝ ꢜꢞ ꢙꢘ ꢢꢠꢣ ꢤꢖꢟ ꢜꢝ ꢖꢙꢗ ꢥꢜ ꢝꢡ ꢦ

ꢍꢚ ꢙ ꢥꢠꢟ ꢝ ꢞ ꢟ ꢙꢗ ꢘꢙ ꢚ ꢛ ꢝ ꢙ ꢞ ꢢꢡ ꢟ ꢖꢘ ꢖꢟꢜ ꢝꢖ ꢙꢗꢞ ꢢꢡ ꢚ ꢝꢧ ꢡ ꢝꢡ ꢚ ꢛꢞ ꢙꢘ ꢒꢡꢨ ꢜꢞ ꢏꢗꢞ ꢝꢚ ꢠꢛ ꢡꢗꢝ ꢞ

ꢞ ꢝ ꢜ ꢗꢥ ꢜ ꢚꢥ ꢩ ꢜ ꢚꢚ ꢜ ꢗ ꢝꢪꢦ ꢍꢚ ꢙ ꢥꢠꢟ ꢝꢖꢙꢗ ꢢꢚ ꢙꢟ ꢡꢞ ꢞꢖ ꢗꢫ ꢥꢙꢡ ꢞ ꢗꢙꢝ ꢗꢡ ꢟꢡ ꢞꢞ ꢜꢚ ꢖꢤ ꢪ ꢖꢗꢟ ꢤꢠꢥ ꢡ

ꢝ ꢡ ꢞ ꢝꢖ ꢗꢫ ꢙꢘ ꢜ ꢤꢤ ꢢꢜ ꢚ ꢜ ꢛ ꢡ ꢝ ꢡ ꢚ ꢞ ꢦ

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

12 3 4 5 6 7...17

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