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SN54LS670W-10 PDF预览

SN54LS670W-10

更新时间: 2024-11-05 19:47:47
品牌 Logo 应用领域
德州仪器 - TI 静态存储器内存集成电路
页数 文件大小 规格书
21页 1085K
描述
4X4 STANDARD SRAM, 45ns, CDFP16

SN54LS670W-10 技术参数

生命周期:Obsolete包装说明:DFP,
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8542.32.00.41风险等级:5.78
最长访问时间:45 nsJESD-30 代码:R-GDFP-F16
长度:10.2 mm内存密度:16 bit
内存集成电路类型:STANDARD SRAM内存宽度:4
功能数量:1端口数量:1
端子数量:16字数:4 words
字数代码:4工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:4X4输出特性:3-STATE
可输出:NO封装主体材料:CERAMIC, GLASS-SEALED
封装代码:DFP封装形状:RECTANGULAR
封装形式:FLATPACK并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:2.03 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:TTL温度等级:MILITARY
端子形式:FLAT端子节距:1.27 mm
端子位置:DUAL宽度:6.73 mm
Base Number Matches:1

SN54LS670W-10 数据手册

 浏览型号SN54LS670W-10的Datasheet PDF文件第2页浏览型号SN54LS670W-10的Datasheet PDF文件第3页浏览型号SN54LS670W-10的Datasheet PDF文件第4页浏览型号SN54LS670W-10的Datasheet PDF文件第5页浏览型号SN54LS670W-10的Datasheet PDF文件第6页浏览型号SN54LS670W-10的Datasheet PDF文件第7页 
SN54LS670, SN74LS670  
4-BY-4 REGISTER FILES WITH 3-STATE OUTPUTS  
SDLS193 – MARCH 1974 – REVISED MARCH 1988  
Copyright 1988, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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