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SN1G-S PDF预览

SN1G-S

更新时间: 2024-10-29 21:16:35
品牌 Logo 应用领域
固锝 - GOOD-ARK 光电二极管
页数 文件大小 规格书
2页 625K
描述
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-214AC, SMAJ, 2 PIN

SN1G-S 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMAJ, 2 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.14
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.1 V
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
最大非重复峰值正向电流:30 A元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大重复峰值反向电压:400 V
最大反向恢复时间:2 µs子类别:Rectifier Diodes
表面贴装:YES端子形式:C BEND
端子位置:DUALBase Number Matches:1

SN1G-S 数据手册

 浏览型号SN1G-S的Datasheet PDF文件第2页 
SN1A-S thru SN1M-S  
1.0 Amp. Surface Mount Glass Passivated Rectifiers  
Voltage Range 50 to 1000 Volts Forward Current 1.0 Ampere  
Features  
‹ Plastic package has Underwriters Laboratory Flammability  
Classification 94V-0  
‹ For surface mounted applications  
‹ Low profile package  
‹ Built-in strain relief, ideal for automated placement  
‹ Easy pick and place  
‹ High temperature soldering:  
260oC/10 seconds at terminals  
Mechanical Data  
‹ Case: New SMA molded plastic  
‹ Terminals: Solder plated, solderable per MIL-STD-750, Method  
2026  
‹ Polarity: Color band denotes cathode end  
‹ Weight: 0.004 ounce, 0.115 gram  
Maximum Ratings and Electrical Characteristics  
Ratings at 25oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Parameter  
Symbols  
SN1A-S  
SN1B-S  
SN1D-S  
SN1G-S  
SN1J-S  
SN1K-S  
SN1M-S  
Units  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
Volts  
Volts  
Volts  
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current  
See Fig.1  
I
1.0  
Amp  
(AV)  
Peak forward surge current, 8.3ms single half sine-wave  
superimposed on rated load (JEDEC Method)  
IFSM  
VF  
IR  
30.0  
1.1  
Amps  
Volts  
Maximum instantaneous forward voltage @ 1.0A  
Maximum DC reverse current  
at rated DC blocking voltage  
@ TA=25oC  
5.0  
100  
uA  
uA  
@ TA=100oC  
uS  
pF  
oC  
oC  
Maximum reverse recovery time (Note 1)  
Typical junction capacitance (Note 2)  
Operating temperature range  
trr  
CJ  
2.0  
15  
TJ  
-55 to +125  
-55 to +150  
Storage temperature range  
TSTG  
Notes:  
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
2. Measured at 1 MHz and Applied VR=4.0 Volts  
315  

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