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SMS2020 PDF预览

SMS2020

更新时间: 2024-11-08 01:17:59
品牌 Logo 应用领域
SECOS /
页数 文件大小 规格书
4页 550K
描述
N-Channel MOSFET

SMS2020 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
Reach Compliance Code:compliant风险等级:5.71
配置:Single最大漏极电流 (Abs) (ID):0.83 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.38 W子类别:FET General Purpose Power
表面贴装:YESBase Number Matches:1

SMS2020 数据手册

 浏览型号SMS2020的Datasheet PDF文件第2页浏览型号SMS2020的Datasheet PDF文件第3页浏览型号SMS2020的Datasheet PDF文件第4页 
SSD2504S  
5.4A , 100V , RDS(ON) 370m  
N-Ch Enhancement Mode Power MOSFET  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen free  
TO-252(D-Pack)  
DESCRIPTION  
The SSD2504S is the highest performance trench  
N-ch MOSFETs with extreme high cell density , which provide  
excellent RDS(on) and gate charge for most of the synchronous  
buck converter applications .  
A
B
FEATURES  
C
D
Advanced high cell density Trench technology  
Super Low Gate Charge  
Excellent CdV/dt effect decline  
100% EAS Guaranteed  
G E  
Green Device Available  
K
H F  
N
O
P
M
J
  
MARKING  
Drain  
Millimeter  
Min.  
Millimeter  
Max.  
2.30 REF.  
REF.  
REF.  
Max.  
Min.  
2504S  
  
A
B
C
D
E
F
6.35  
5.20  
2.15  
0.45  
6.8  
2.40  
5.40  
0.64  
6.80  
5.50  
2.40  
0.58  
7.5  
3.0  
6.25  
1.20  
J
K
M
N
O
P
Date Code  
  
Gate  
0.64  
0.50  
0.9  
0
0.43  
0.90  
1.1  
1.65  
0.15  
0.58  
PACKAGE INFORMATION  
G
H
  
Source  
Package  
MPQ  
Leader Size  
TO-252  
2.5K  
13 inch  
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)  
Parameter  
Symbol  
VDS  
Rating  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
100  
±20  
VGS  
V
5.4  
A
TC=25°C  
Continuous Drain Current @VGS=10V 1  
Pulsed Drain Current 2  
ID  
IDM  
TC=100°C  
3.4  
A
11  
A
TC=25°C  
TA=25°C  
20.8  
1.13  
-55~150  
Total Power Dissipation 3  
PD  
W
Operating Junction and Storage Temperature Range  
TJ, TSTG  
°C  
Thermal Resistance Rating  
Maximum Thermal Resistance Junction-Ambient 1  
Maximum Thermal Resistance Junction-Case 1  
RθJA  
RθJC  
110  
6
°C / W  
°C / W  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
08-May-2014 Rev. B  
Page 1 of 4  

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