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SMS110 PDF预览

SMS110

更新时间: 2024-11-08 14:52:51
品牌 Logo 应用领域
鲁光 - LGE 肖特基二极管
页数 文件大小 规格书
2页 1189K
描述
肖特基二极管

SMS110 技术参数

Case Style:DO-213ABIF(A):1.0
Maximum recurrent peak reverse voltage:100Peak forward surge current:30
Maximum instantaneous forward voltage:0.79@IF(A):1.0
Maximum reverse current:0.5TJ(℃):/
class:Diodes

SMS110 数据手册

 浏览型号SMS110的Datasheet PDF文件第2页 
SMS12-SMS110  
Surface Mount Schottky Barrier Rectifiers  
REVERSE VOLTAGE: 20 --- 100 V  
CURRENT: 1.0 A  
Features  
DO - 213AB  
Plastic package has Underwriters Laborator  
111  
FlammabilityClassification 94V-0  
For surface mounted applications  
Low profile package  
SOLDERABLE ENDS  
0  
0.20  
D2=D1  
Built-in strain relief  
D2  
Metal silicon junction, majoritycarrier conduction  
High surge capability  
High current capability,low forward voltage drop  
Low power loss,high effciency  
0.5± 0.1  
0.5± 0.1  
4.9± 0.2  
For use in low voltage high frequency inverters,free  
wheeling and polarityprotection applications  
Guardring for overvoltage protection  
111  
High temperature soldering guaranteed:250oC/10 1  
seconds at terminals  
11  
Dimensions in millimeters  
Mechanical Data  
Case:JEDEC DO-213AB,molded plastic over  
1111passivated chip  
Polarity: Color band denotes cathode end  
Weight: 0.0046 ounces, 0.116 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25oC ambient temperature unless otherwise specified  
UNITS  
SMS12 SMS13 SMS14  
SMS16 SMS19 SMS11  
Maximumrecurrent peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRWS  
VDC  
20  
14  
20  
30  
21  
30  
40  
28  
40  
60  
42  
60  
90  
63  
90  
100  
70  
V
V
V
MaximumDC blocking voltage  
100  
Maximumaverage forw ord rectified current at  
1.0  
30  
I(AV)  
IFSM  
VF  
A
A
V
c
TL(SEEFIG.1) (NOTE2)  
Peak forw ard surge current 8.3ms single half-  
c sine-w ave superimposed on rated load(JEDEC  
c Method)  
Maximuminstantaneous forw ard voltage at  
0.5  
0.7  
0.79  
v 1.0A(NOTE.1)  
MaximumDC reverse current @TA=25oC  
0.5  
IR  
mA  
at rated DC blocking voltage(NOTE1) @TA=100oC  
5.0  
45  
15  
Rθ  
JA  
Typical thermal resitance (NOTE2)  
K/W  
Rθ  
JL  
oC  
oC  
Operating junction and storagetemperature range  
Storage temperature range  
TSTG  
TJ  
-55--- +150  
-55--- +150  
NOTE: 1.Pulse test:300 S pulse width,1%duty cycle  
μ
2. P.C.B.mounted with 0.55"X0.55"(14.0X14.0mm2)copper pad areas  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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