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SMP50N06-25 PDF预览

SMP50N06-25

更新时间: 2024-11-28 19:15:23
品牌 Logo 应用领域
威世 - VISHAY 晶体管
页数 文件大小 规格书
1页 155K
描述
Power Field-Effect Transistor, 46A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

SMP50N06-25 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.66Is Samacsys:N
配置:Single最大漏极电流 (Abs) (ID):50 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e0
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):131 W
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

SMP50N06-25 数据手册

  

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