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SMP30A-E3/84A PDF预览

SMP30A-E3/84A

更新时间: 2024-11-21 21:22:31
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 91K
描述
Trans Voltage Suppressor Diode, 30V V(RWM), Unidirectional,

SMP30A-E3/84A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.8
击穿电压标称值:35.05 V最大钳位电压:48.4 V
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE极性:UNIDIRECTIONAL
最大重复峰值反向电压:30 V子类别:Transient Suppressors
表面贴装:YESBase Number Matches:1

SMP30A-E3/84A 数据手册

 浏览型号SMP30A-E3/84A的Datasheet PDF文件第2页浏览型号SMP30A-E3/84A的Datasheet PDF文件第3页浏览型号SMP30A-E3/84A的Datasheet PDF文件第4页 
New Product  
SMP11 thru SMP36A  
Vishay General Semiconductor  
Surface Mount TRANSZORB® Transient Voltage Suppressors  
FEATURES  
• Very low profile - typical height of 1.0 mm  
eSMPTM Series  
• Ideal for automated placement  
• Available in uni-directional  
• 400 W peak pulse power capability with a  
10/1000 µs waveform  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
DO-220AA (SMP)  
• Meets MSL level 1, per J-STD-020  
• Solder dip 260 °C, 40 s  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and  
lighting on ICs, MOSFET, signal lines of sensor units  
for consumer, computer, industrial, automotive and  
telecommunication.  
PRIMARY CHARACTERISTICS  
VWM  
11 V to 36 V  
PPPM  
400 W  
40 A  
IFSM  
MECHANICAL DATA  
Case: DO-220AA (SMP)  
TJ max.  
150 °C  
Molding compound meets UL 94 V-0 flammability  
rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
PPPM  
IPPM  
VALUE  
UNIT  
W
Peak pulse power dissipation with a 10/1000 µs waveform (1)(2) (Fig. 1)  
Peak pulse current with a 10/1000 µs waveform (1)  
400  
See table next page  
A
Peak forward surge current 10 ms single half sine-wave (2)  
Maximum instantaneous forward voltage at 25 A (3)  
Operating junction and storage temperature range  
IFSM  
40  
2.5  
A
VF  
V
TJ, TSTG  
- 55 to + 150  
°C  
Notes:  
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2  
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal  
(3) Pulse test: 300 µs pulse width, 1 % duty cycle  
Document Number: 88481  
Revision: 20-Oct-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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